Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors
This work describes the development process of state-of-the-art electrical broadband amplifiers, which are suitable as modulator drivers in electrical time division multiplex (ETDM) systems, operating at 80 Gbit/s. The realization is successfully accomplished in three major development steps: optimi...
| Otros Autores: | |
|---|---|
| Formato: | Libro electrónico |
| Idioma: | Inglés |
| Publicado: |
Karlsruhe :
KIT Scientific Publishing
2006.
|
| Materias: | |
| Ver en Biblioteca Universitat Ramon Llull: | https://discovery.url.edu/permalink/34CSUC_URL/1im36ta/alma991009745143106719 |
| Sumario: | This work describes the development process of state-of-the-art electrical broadband amplifiers, which are suitable as modulator drivers in electrical time division multiplex (ETDM) systems, operating at 80 Gbit/s. The realization is successfully accomplished in three major development steps: optimization of the transistor geometry of InP-based Double Heterojunction Bipolar Transistors (DHBT), extraction of large- and small-signal models, and design and realization of lumped and distributed amplifiers. |
|---|---|
| Descripción Física: | 1 online resource (vi, 132 pages) |
