Reliability Analysis of Electrotechnical Devices

Reliability Analysis of Electrotechnical Devices

This is a book on the practical approaches of reliability to electrotechnical devices and systems. It includes the electromagnetic effect, radiation effect, environmental effect, and the impact of the manufacturing process on electronic materials, devices, and boards.

Detalles Bibliográficos
Otros Autores: Tan, Cher Ming (Editor)
Formato: Libro electrónico
Idioma:Inglés
Publicado: Basel MDPI - Multidisciplinary Digital Publishing Institute 2022
Materias:
Technology: general issues
History of engineering & technology
3D-IC (three-dimensional integrated circuit)
electromagnetic interference
near field measurement
SAC305
BGA
low temperature
fracture failure
factorial design of experiment
genetic algorithm optimization
return loss
multiple-input multiple-output (MIMO)
single event effects
linear energy transfer
Monte Carlo simulation
radiation hardness
pressureless sintered micron silver joints
deep space environment
extreme thermal shocks
reconstruction
simulation
elastic mechanical properties
state of health
remaining useful life
electrochemistry based electrical model
semi-empirical capacity fading model
useful life distribution
quality and reliability assurance
single event effect
microdosimetry
lineal energy
deconvolution
gamma process
lifetime
measurement system analysis
reliability estimation
GaN
operational amplifier
proton therapy
prompt gamma imaging
3D X-ray
bias temperature-humidity reliability test
conductive anodic filament (CAF)
de-penalization
finite element analysis
Ver en Biblioteca Universitat Ramon Llull:https://discovery.url.edu/permalink/34CSUC_URL/1im36ta/alma991009672620406719
Descripción
Sumario:This is a book on the practical approaches of reliability to electrotechnical devices and systems. It includes the electromagnetic effect, radiation effect, environmental effect, and the impact of the manufacturing process on electronic materials, devices, and boards.
Descripción Física:1 electronic resource (174 p.)

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