Fundamentals and Recent Advances in Epitaxial Graphene on SiC

Fundamentals and Recent Advances in Epitaxial Graphene on SiC

This book is a compilation of recent studies by recognized experts in the field of epitaxial graphene working towards a deep comprehension of growth mechanisms, property engineering, and device processing. The results of investigations published within this book develop cumulative knowledge on matte...

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Detalles Bibliográficos
Otros Autores: Yakimova, Rositsa (Editor), Shtepliuk, Ivan (Otro)
Formato: Libro electrónico
Idioma:Inglés
Publicado: Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute 2021
Materias:
Technology: general issues
epitaxial graphene
copper
redox reaction
electrodeposition
voltammetry
chronoamperometry
DFT
silicon carbide
Raman spectroscopy
2D peak line shape
G peak
charge density
strain
atomic layer deposition
high-k insulators
ion implantation
Raman
AFM
XPS
graphene
SiC
3C-SiC on Si
substrate interaction
carrier concentration
mobility
intercalation
buffer layer
surface functionalization
twistronics
twisted bilayer graphene
flat band
epitaxial graphene on SiC
quasi-free-standing graphene
monolayer graphene
high-temperature sublimation
terahertz optical Hall effect
free charge carrier properties
sublimation
electronic properties
material engineering
deposition
Ver en Biblioteca Universitat Ramon Llull:https://discovery.url.edu/permalink/34CSUC_URL/1im36ta/alma991009655128906719
Descripción
Sumario:This book is a compilation of recent studies by recognized experts in the field of epitaxial graphene working towards a deep comprehension of growth mechanisms, property engineering, and device processing. The results of investigations published within this book develop cumulative knowledge on matters related to device-quality epaxial graphene on SiC, bringing this material closer to realistic applications.
Descripción Física:1 electronic resource (94 p.)

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