Advances in Porous Semiconductor Research
Since the discovery of the luminescent properties of porous Si by L. Canham in 1990, the anodization process has attracted enormous interest for the fabrication of porous semiconductors. To date, this technique has been widely used to design new materials with advanced physico-chemical properties fo...
| Otros Autores: | , |
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| Formato: | Libro electrónico |
| Idioma: | Inglés |
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Frontiers Media SA
2020
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| Materias: | |
| Ver en Biblioteca Universitat Ramon Llull: | https://discovery.url.edu/permalink/34CSUC_URL/1im36ta/alma991009654985906719 |
| Sumario: | Since the discovery of the luminescent properties of porous Si by L. Canham in 1990, the anodization process has attracted enormous interest for the fabrication of porous semiconductors. To date, this technique has been widely used to design new materials with advanced physico-chemical properties for many applications in optics, microelectronics, energy, biology and medicine. |
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| Descripción Física: | 1 electronic resource (183 p.) |
| Acceso: | Open access |
