Handbook of silicon based MEMS materials and technologies
A comprehensive guide to MEMS materials, technologies and manufacturing, examining the state of the art with a particular emphasis on current and future applications. Key topics covered include: Silicon as MEMS materialMaterial properties and measurement techniquesAnalytical methods used in mat...
| Otros Autores: | |
|---|---|
| Formato: | Libro electrónico |
| Idioma: | Inglés |
| Publicado: |
Amsterdam ; Boston :
William Andrew/Elsevier
2010.
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| Edición: | 1st ed |
| Colección: | Micro & nano technologies.
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| Materias: | |
| Ver en Biblioteca Universitat Ramon Llull: | https://discovery.url.edu/permalink/34CSUC_URL/1im36ta/alma991009629689606719 |
Tabla de Contenidos:
- Front Cover
- Handbook of Silicon Based MEMS Materials and Technologies
- Copyright Page
- Contents
- Preface
- List of Contributors
- Overview
- Impact of Silicon MEMS-30 years after
- Introduction
- Towards Mass Volumes of MEMS Devices
- Ink Jet Printer Nozzles Create the Industry
- Automotive Applications Drive the Reliability and the Quality
- Leaps Towards a Generic Manufacturing Platform
- Towards Every Pocket
- Mobile Phones and Mobile Multimedia Computers
- Ubiquitous Sensing, Computing and Communication
- Future of MEMS Technologies
- Conclusions
- Acknowledgements
- References
- PART I: Silicon as MEMS Material
- Chapter 1 Properties of Silicon
- 1.1 Properties of Silicon
- References
- Chapter 2 Czochralski Growth of Silicon Crystals
- 2.1 The CZ Crystal-Growing Furnace
- 2.2 Stages of Growth Process
- 2.3 Issues of Crystal Growth
- 2.4 Improved Thermal and Gas Flow Designs
- 2.5 Heat Transfer
- 2.6 Melt Convection
- 2.7 Magnetic Fields
- 2.8 Hot Recharging
- References
- Further reading
- Chapter 3 Properties of Silicon Crystals
- 3.1 Dopants and Impurities
- 3.2 Typical Impurity Concentrations
- 3.3 Concentration of Dopants and Impurities in Axial Direction
- 3.4 Resistivity
- 3.5 Radial Variation of Impurities and Resistivity
- 3.6 Thermal Donors
- 3.7 Defects in Silicon Crystals
- 3.8 Control of Vacancies, Interstitials, and the OISF Ring
- 3.9 Conclusion
- Acknowledgments
- References
- Chapter 4 Oxygen in Silicon
- 4.1 Oxygen in Solid Solution
- 4.2 Formation of Small Oxygen Aggregates
- 4.3 Precipitation of Oxygen
- 4.4 Precipitate-Induced Defects
- 4.5 Behavior of Oxygen in Basic Heat Treatment Procedures
- References
- Chapter 5 Silicon Wafers: Preparation and Properties
- 5.1 Silicon Wafer Manufacturing Process
- 5.2 Standard Measurements of Polished Wafers.
- 5.3 Sample Specifications of MEMS Wafers
- 5.4 Standards of Silicon Wafers
- References
- Chapter 6 Epi Wafers: Preparation and Properties
- 6.1 Silicon Epitaxy-The Basics
- 6.2 The Epi-Poly Process
- 6.3 Etch Stop Layers
- 6.4 Epi on SOI Substrates
- 6.5 Selective Epitaxy and Epitaxial Layer Overgrowth
- 6.6 Metrology
- 6.7 Commercially Available Epitaxy Systems
- 6.8 Summary
- References
- Chapter 7 Thick-Film SOI Wafers: Preparation and Properties
- 7.1 Introduction
- 7.2 Overview of SOI
- 7.3 Silicon Wafer Parameters for Direct Bonding
- 7.4 Fabrication of Thick-Film BSOI by Mechanical Grinding and Polishing
- 7.5 BESOI Process
- 7.6 Techniques Based on Thin-Film SOI and Silicon Epitaxy
- 7.7 Conclusion
- References
- Chapter 8 Silicon Dioxides
- 8.1 Introduction
- 8.2 Growth Methods of Silicon Dioxide
- 8.3 Structure and Properties of Silicon Dioxides
- 8.4 Processing of Silicon Dioxides
- References
- PART II: Modeling in MEMS Methods
- Chapter 9 Multiscale Modeling
- 9.1 Microscopic and Macroscopic Equations
- 9.2 Computational Methods
- References
- Chapter 10 Manufacture and Processing of MEMS Structures
- 10.1 Introduction
- 10.2 Requirements for Modeling Micromachining
- 10.3 Micromachining As a Front Propagation Problem
- 10.4 Anisotropic Etching: Geometrical Simulators
- 10.5 Anisotropic Etching: Atomistic Simulators
- 10.6 A Survey of Etching Simulators
- References
- Chapter 11 Mechanical Properties of Silicon Microstructures
- 11.1 Basic Structural Properties of Crystalline Silicon
- 11.2 Dislocations in Silicon
- 11.3 Physical Mechanisms of Fracture in Silicon
- 11.4 Physical Mechanisms of Fatigue of Silicon
- References
- Additional References
- Chapter 12 Electrostatic and RF-Properties of MEMS Structures
- 12.1 Introduction
- 12.2 Model System for a Dynamic Micromechanical Device.
- 12.3 Electrical Equivalent Circuit
- 12.4 Electrostatic Force
- 12.5 Electromechanical Coupling
- 12.6 Sensing of Motion
- 12.7 Pull-in Phenomenon
- 12.8 Parasitic Capacitance
- 12.9 Effect of Built-in Potential on Capacitively Coupled MEMS-Devices
- 12.10 Further Effects of Electrostatic Nonlinearities from Applications Point of View
- 12.11 RF-Properties
- Acknowledgments
- References
- Chapter 13 Optical Modeling of MEMS
- 13.1 Optical Properties of Silicon and Related Materials
- 13.2. Theoretical Background
- 13.3 Numerical Modeling Methods for Optical MEMS
- References
- Chapter 14 Gas Damping in Vibrating MEMS Structures
- 14.1 Introduction
- 14.2 Damping Dominated by Gas Viscosity
- 14.3 First-Order Frequency Dependencies
- 14.4 Viscoacoustic Models
- 14.5 Simulation Tools
- References
- PART III: Measuring MEMS
- Chapter 15 Introduction to Measuring MEMS
- 15.1 On MEMS Measurements
- 15.2 Variation and Mapping
- 15.3 MEMS Measurement Challenges
- References
- Chapter 16 Silicon Wafer and Thin Film Measurements
- 16.1 Important Measurements
- 16.2 Wafer Shape
- 16.3 Resistivity
- 16.4 Thickness of Thin Films
- References
- Chapter 17 Optical Measurement of Static and Dynamic Displacement in MEMS
- 17.1 Camera-Based Measurements
- References
- Chapter 18 MEMS Residual Stress Characterization: Methodology and Perspective
- 18.1 Introduction
- 18.2 MEMS residual stress characterization techniques
- 18.3 Perspective and Conclusion
- References
- Chapter 19 Strength of Bonded Interfaces
- 19.1 Solid Mechanics
- 19.2 Double Cantilever Beam Test Method
- 19.3 Tensile Test Method
- 19.4 Blister Test Method
- 19.5 Chevron Test Structures
- 19.6 Summary and Outlook
- References
- Chapter 20 Focused Ion and Electron Beam Techniques
- 20.1 Brief Introduction to DualBeam Instrumentation.
- 20.2 FIB for Direct Milling and Deposition of Structures
- 20.3 SEM for Direct Deposition or Lithography of Structures
- 20.4 DualBeam Applications of FA and Characterization of MEMS Devices
- Reference
- Chapter 21 Oxygen and Bulk Microdefects in Silicon
- 21.1 Measuring Oxygen in Silicon
- 21.2 Measuring Bulk Microdefects
- References
- PART IV: Micromachining Technologies in MEMS
- Chapter 22 MEMS Lithography
- 22.1 Lithography Considerations Before Wafer Processing
- 22.2 Wafers in Lithography Process
- 22.3 Processing After Lithography
- 22.4 Thick Photoresist Lithography
- References
- Chapter 23 Deep Reactive Ion Etching
- 23.1 Etch Chemistries
- 23.2 Equipment
- 23.3 DRIE Processes
- 23.4 DRIE Advanced Issues and Challenges
- 23.5 DRIE Applications
- 23.6 Post-DRIE Etch Treatments
- 23.7 Choosing between Wet and Dry Etching
- References
- Chapter 24 Wet Etching of Silicon
- 24.1 Basic Description of Anisotropic Etching: Faceting
- 24.2 Beyond Faceting: Atomistic Phenomena
- 24.3 Beyond Atomistics: Electrochemistry
- 24.4 Typical Surface Morphologies (I. Zubel and M.A. Gosálvez)
- 24.5 Effects from Silicon Wafer Features (E. Viinikka)
- 24.6 Convex Corner Undercutting
- 24.7 Examples of Wet Etching
- 24.8 Popular Wet Etchants
- 24.9 Temperature Dependence of the Etch Rate
- 24.10. Concentration Dependence of the Etch Rate
- 24.11 Other Variables Affecting the Etch-Rate Values
- 24.12 Experimental Determination of Etch Rates
- 24.13 Converting Between Different Measures of Concentration
- References
- Chapter 25 Porous Silicon Based MEMS
- 25.1 Porous Silicon Background
- 25.2 PS Sacrificial Layer Technologies
- 25.3 PS Fabrication Technology
- 25.4 Microscopic Processes Underlying PS Formation
- 25.5 Formation of Silicon Microstructures
- 25.6 Application Examples
- 25.7 Summary and Conclusions.
- References
- Chapter 26 Atomic Layer Deposition in MEMS Technology
- 26.1 Atomic Layer Deposition: An Introduction
- 26.2 Operation Principles of ALD
- 26.3 ALD Processes
- 26.4 Characteristics of ALD Processes and Films
- 26.5 ALD Reactors
- 26.6 Applications for ALD in MEMS
- 26.7 Outlook
- References
- Chapter 27 Metallic Glass
- 27.1 Introduction
- 27.2 Glassy/Amorphous Metals
- 27.3 Properties of Metallic Glasses
- 27.4 Microfabrication Ability of BMGs
- 27.5 Nanoforming Ability of Glassy Metals (Below 100 nm)
- 27.6 Applications of BMGs in MEMS
- 27.7 Metallic Glass Thin Films: A Pathway to Integrated MEMS
- 27.8 Micro/Nanofabrication Ability of Glassy Thin Films
- References
- Chapter 28 Surface Micromachining
- 28.1 Polycrystalline Silicon-Based Micromachining
- 28.2 Integration Concepts
- 28.3 Metallic MEMS
- 28.4 SOI-Wafer-Based Surface Micromachining
- References
- Chapter 29 Silicon Based BioMEMS: Micromachining Technologies
- 29.1 Introduction to Silicon Based BioMEMS Devices
- 29.2 Silicon BioMEMS for Health Care
- 29.3 Silicon BioMEMS for Biological Detection
- 29.4 Conclusions and Future Research Areas
- References
- PART V: Encapsulation of MEMS Components
- Chapter 30 Introduction to Encapsulation of MEMS
- 30.1 Early Work on Bulk-MEMS Devices
- 30.2 Encapsulation in Surface Micromachining
- 30.3 Protection of the MEMS Device
- 30.4 Controlled Atmosphere
- 30.5 Structural Functions
- 30.6 Wafer Bonding Methods
- 30.7 Sealing by Film Deposition
- 30.8 Via Technologies
- References
- Chapter 31 Silicon Direct Bonding
- 31.1 Hydrophilic High-Temperature Wafer Bonding
- 31.2 Hydrophobic High-Temperature Bonding of Silicon
- 31.3 Low-Temperature Direct Bonding of Silicon
- 31.4 Direct Bonding of CVD Oxides
- 31.5 Direct Bonding of CVD Silicon
- References
- Chapter 32 Anodic Bonding.
- 32.1 Introduction.
