Characterization in silicon processing editor, Yale Strusser [and three others] ; design, Christopher Simon ; contributors, Roc Blumenthal [and sixteen others]
This volume is devoted to the consideration of the use use of surface, thin film and interface characterization tools in support of silicon-based semiconductor processing. The approach taken is to consider each of the types of films used in silicon devices individually in its own chapter and to disc...
| Otros Autores: | , , , |
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| Formato: | Libro electrónico |
| Idioma: | Inglés |
| Publicado: |
Stoneham, Massachusetts ; Greenwich, Connecticut :
Butterworth-Heinemann
1993.
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| Edición: | 1st edition |
| Colección: | Materials characterization series.
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| Materias: | |
| Ver en Biblioteca Universitat Ramon Llull: | https://discovery.url.edu/permalink/34CSUC_URL/1im36ta/alma991009627934406719 |
Tabla de Contenidos:
- Front Cover; Characterization in Silicon Processing; Copyright page; Table of Contents; Preface to Series; Preface; Contributors; CHAPTER 1. APPLICATION OF MATERIALS CHARACTERIZATION TECHNIQUES TO SILICON EPITAXIAL GROWTH; 1.1 Introduction; 1.2 Silicon Epitaxial Growth; 1.3 Film and Process Characterization; 1.4 Selective Growth; 1.5 Si1 - xGex Epitaxial Growth; 1.6 Si 1 - xGex Material Characterization; 1.7 Summary; Acknowledgments; References; CHAPTER 2. POLYSILICON CONDUCTORS; 2.1 Introduction; 2.2 Deposition; 2.3 Doping; 2.4 Patterning; 2.5 Subsequent Processing; References
- CHAPTER 3. SILICIDES3.1 Introduction; 3.2 Formation of Suicides; 3.3 The Silicide-Silicon Interface; 3.4 Oxidation of Silicides; 3.5 Dopant Redistribution During Silicide Formation; 3.6 Stress in Silicides; 3.7 Stability of Silicides; 3.8 Summary; References; CHAPTER 4. ALUMINUM- AND COPPER-BASED CONDUCTORS; 4.1 Introduction; 4.2 Film Deposition; 4.3 Film Growth; 4.4 Encapsulation; 4.5 Reliability Concerns; References; CHAPTER 5. TUNGSTEN-BASED CONDUCTORS; 5.1 Applications for ULSI Processing; 5.2 Deposition Principles; 5.3 Blanket Tungsten Deposition; 5.4 Selective Tungsten Deposition
- ReferencesCHAPTER 6. BARRIER FILMS; 6.1 Introduction; 6.2 Characteristics of Barrier Films; 6.3 Types of Barrier Films; 6.4 Processing Barrier Films; 6.5 Examples of Barrier Films; 6.6 Summary; Acknowledgments; References; APPENDIX: TECHNIQUE SUMMARIES; 1 Auger Electron Spectroscopy (AES); 2 Ballistic Electron Emission Microscopy (BEEM); 3 Capacitance-Voltage (C-V) Measurements; 4 Deep Level Transient Spectroscopy (DLTS); 5 Dynamic Secondary Ion Mass Spectrometry (Dynamic SIMS); 6 Electron Beam Induced Current (EBIC) Microscopy; 7 Energy-Dispersive X-Ray Spectroscopy (EDS)
- 8 Focused Ion Beams (FIBs)9 Fourier Transform Infrared Spectroscopy (FTIR); 10 Hall Effect Resistivity Measurements; 11 Inductively Coupled Plasma Mass Spectrometry (ICPMS); 12 Light Microscopy; 13 Low-Energy Electron Diffraction (LEED); 14 Neutron Activation Analysis (NAA); 15 Optical Scatterometry; 16 Photoluminescence (PL); 17 Raman Spectroscopy; 18 Reflection High-Energy Electron Diffraction (RHEED); 19 Rutherford Backscattering Spectrometry (RBS); 20 Scanning Electron Microscopy (SEM); 21 Scanning Transmission Electron Microscopy (STEM)
- 22 Scanning Tunneling Microscopy and Scanning Force Microscopy (STM and SFM)23 Sheet Resistance and the Four Point Probe; 24 Spreading Resistance Analysis (SRA); 25 Static Secondary Ion Mass Spectrometry (Static SIMS); 26 Surface Roughness: Measurement, Formation by Sputtering, Impact on Depth Profiling; 27 Total Reflection X-Ray Fluorescence Analysis (TXRF); 28 Transmission Electron Microscopy (TEM); 29 Variable-Angle Spectroscopic Ellipsometry (VASE); 30 X-Ray Diffraction (XRD); 31 X-Ray Fluorescence (XRF); 32 X-Ray Photoelectron Spectroscopy (XPS); Index
