Tabla de Contenidos:

Tabla de Contenidos: “…7.6 Insulated Gate Bipolar Transistor (IGBT)…”

Tabla de Contenidos: “…1.3.2 Noise Immunity1.3.3 Timing Parameters; 1.3.4 Eye Diagram; 1.4 Modeling Digital Systems; 1.4.1 Mathematical Tools; 1.4.2 Spice-Like Circuit Simulators; 1.4.3 Full-Wave Numerical Tools; 1.4.4 Professional Simulators; References; 2 High-Speed Digital Devices; 2.1 Input/Output Static Characteristic; 2.1.1 Current and Voltage Specifications; 2.1.2 Transistor-Transistor Logic (TTL) Devices; 2.1.3 Complementary Metal Oxide Semiconductor (CMOS) Devices; 2.1.4 Emitter-Coupled Logic (ECL) Devices; 2.1.5 Low-Voltage Differential Signal (LVDS) Devices…”

Tabla de Contenidos: “…4.5.2 VERTICAL METAL-OXIDE SEMICONDUCTOR POWER FIELD-EFFECT TRANSISTORS -- 4.5.3 GATE DRIVE IMPEDANCE -- Gate-Source Overvoltage -- Source Lead Inductance -- 4.5.4 SWITCHING SPEED -- 4.5.5 ON-STATE RESISTANCE -- P-Channel Vertical Metal-Oxide Semiconductor -- 4.6 INSULATED GATE BIPOLAR TRANSISTORS -- 4.6.1 INSULATED GATE BIPOLAR TRANSISTOR STRUCTURE -- 4.6.2 ADVANTAGES OVER MOSFETS AND BIPOLARS -- 4.6.3 DISADVANTAGES -- 4.7 WIDE BAND GAP DEVICES -- 5 - Analog Integrated Circuits -- 5.1 THE IDEAL OP-AMP -- 5.1.1 APPLICATIONS CATEGORIES -- 5.2 THE PRACTICAL OP-AMP -- 5.2.1 OFFSET VOLTAGE -- Output Saturation Due to Amplified Offset -- Reducing the Effect of Offset -- Offset Drift -- Circuit Techniques to Remove the Effect of Drift -- 5.2.2 BIAS AND OFFSET CURRENTS -- Bias Current Levels -- Output Offsets Due to Bias and Offset Currents -- 5.2.3 COMMON-MODE EFFECTS -- Common-Mode Rejection Ratio -- Power Supply Rejection Ratio -- 5.2.4 INPUT VOLTAGE RANGE -- Absolute Maximum Input -- 5.2.5 OUTPUT PARAMETERS -- Power Rail Voltage -- Load Impedance -- 5.2.6 AC PARAMETERS -- 5.2.7 SLEW RATE AND LARGE-SIGNAL BANDWIDTH -- Slew Rate -- Large-Signal Bandwidth -- Slewing Distortion -- 5.2.8 SMALL-SIGNAL BANDWIDTH -- 5.2.9 SETTLING TIME -- 5.2.10 THE OSCILLATING AMPLIFIER -- Ground Coupling -- Power Supply Coupling -- Output-Stage Instability -- Stray Capacitance at the Input -- Parasitic Feedback -- 5.2.11 OPEN-LOOP GAIN -- Sagging AOL -- 5.2.12 NOISE -- Definitions -- 5.2.13 CALCULATING THE EFFECT OF NOISE IN A CIRCUIT -- Power Spectral Density of Noise -- Types of Noise -- Thermal Noise -- Amplifier Noise -- Noise Bandwidth -- Modeling and Simulation of Noise -- 5.2.14 SUPPLY CURRENT AND VOLTAGE -- Supply Voltage -- Supply Current -- lS Versus Speed and Dissipation -- 5.2.15 TEMPERATURE RATINGS -- Specification Validity -- Package Reliability…”

Tabla de Contenidos: “…2.2.1 Cells and Electrodes2.2.2 Reference Electrodes; 2.2.3 Quantitative Relationships: The Nernst Equation; 2.2.4 Practical Aspects of Ion-Selective Electrodes; 2.2.5 Measurement and Calibration; 2.3 Voltammetry and Amperometry; 2.3.1 Linear-Sweep Voltammetry; 2.3.2 Cyclic Voltammetry; 2.3.3 Chronoamperometry; 2.3.4 Amperometry; 2.3.5 Kinetic and Catalytic Effects; 2.4 Conductivity; 2.5 Field-Effect Transistors; 2.5.1 Semiconductors - Introduction; 2.5.2 Semiconductor-Solution Contact; 2.5.3 Field-Effect Transistor; 2.6 Modified Electrodes, Thin-Film Electrodes and Screen-Printed Electrodes…”

Tabla de Contenidos: “…3.3 Bandwidth Efficiency3.4 Forward Error Correction (FEC); 3.5 Radio Regulation; 3.6 Licensed Versus Unlicensed Radio Spectrum; 3.7 Unlicensed Spectrum in the Rest of the World; 3.8 General Difficulties in Wireless; 3.9 Basic Characteristics of 802.11 Wireless LANs; 3.10 Conclusion; Chapter 4: Advanced Architectures; References; Chapter 5: RF Power Amplifiers; 5.1 Power Amplifier Class of Operation; 5.2 Conclusion; References; Chapter 6: RF Amplifiers; 6.1 Noise and Preselectors/Preamplifiers; 6.2 Amplifier Configurations; 6.3 Transistor Gain; 6.4 Classification by Common Element…”

Tabla de Contenidos: “…Intro -- Impressum -- Einführung -- Kapitel 1: Das Board -- 1.1 Der Raspberry Pi Microcontroller RP2040 -- 1.2 Die Leiterplatte -- 1.3 Die Leiterplatte Pico W -- 1.4 Anschlüsse -- 1.5 Spannungsversorgung -- 1.6 Spannungsversorgung Zusatzfunktionen -- 1.6.1 Abfrage USB -- 1.6.2 Low Power -- Kapitel 2: Die Software -- 2.1 Thonny-Entwicklungsumgebung (IDE) -- 2.1.1 Installation von Thonny -- 2.1.2 Konfiguration von Thonny -- 2.2 MicroPython -- 2.2.1 MicroPython für Raspberry Pi Pico -- 2.2.2 Installation von MicroPython -- 2.2.3 MicroPython in ThonnyIDE -- Kapitel 3: Erste Schritte -- 3.1 Erstes Programm -- 3.2 Projekt »Blink LED« -- 3.3 Programmaufbau -- 3.4 Steckbrett und Elektronik -- 3.4.1 Steckbrett -- 3.4.2 Bauteile der Elektronik -- Kapitel 4: Digitale Ein- und Ausgänge -- 4.1 Ein- und Ausgänge am Pico -- 4.2 Eingang einlesen -- 4.2.1 Pullup oder Pulldown -- 4.3 Praxisbeispiel: Taster einlesen und Status ausgeben -- 4.4 LED ansteuern -- 4.5 PWM -- 4.5.1 Praxisbeispiel: LED mit PWM -- 4.6 Servo -- 4.6.1 Praxisbeispiel: Servo mit Potentiometer -- 4.7 Transistor, Relais -- 4.7.1 Transistor -- 4.7.2 Relais -- 4.8 Motor -- 4.8.1 Einfache Motor-Stufe (ein Motor) -- 4.8.2 Motor-Treiber für zwei Motoren -- 4.8.3 Praxisbeispiel: Motor-Ansteuerung (1 Motor) -- 4.8.4 Praxisbeispiel: Motor-Ansteuerung (2 Motoren) -- 4.8.5 Praxisbeispiel: Mini-Roboter -- Kapitel 5: Analoge Welt -- 5.1 Spannung einlesen -- 5.2 Praxisbeispiel: Messung mit dem internen Temperatursensor -- 5.3 Praxisbeispiel: Poti mit LED-Ampel -- 5.4 Praxisbeispiel: Lichtmesser mit LDR -- 5.5 Praxisbeispiel: Temperaturmessung mit NTC -- Kapitel 6: Anzeigen -- 6.1 RGB-LED -- 6.2 LC-Display (LCD) -- 6.3 OLED-Display -- 6.4 Projekt: Wetterstation mit Umweltsensor DHT22 -- 6.5 Projekt: Uhr mit OLED -- Kapitel 7: Schnittstellen -- 7.1 UART -- 7.1.1 Praxisbeispiel: Datenaustausch mit Arduino…”

“…De tal manera, que ha conseguido aterrorizar a los oyentes y atrapar la atención de las familias para escuchar el radioserial alrededor de un transistor. Su evolución ha sido clara a lo largo de una historia radiofónica, donde la creatividad siempre ha imperado. …”
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Tabla de Contenidos: “…4.4.1 OLED Module Components 4.4.2 Two-Transistor One-Capacitor (2T1C) Driving Circuit; 4.4.3 Ambient Performance; 4.4.4 Subpixel Rendering; 5: TFT Substrate for OLED Driving; 5.1 TFT STRUCTURE; 5.2 TFT PROCESS; 5.2.1 Low-Temperature Polysilicon Process Overview; 5.2.2 Thin-Film Formation; 5.2.3 Patterning Technique; 5.2.4 Excimer Laser Crystallization; 5.3 MOSFET BASICS; 5.4 LTPS-TFT-DRIVEN OLED DISPLAY DESIGN; 5.4.1 OFF Current; 5.4.2 Driver TFT Size Restriction; 5.4.3 Restriction Due to Voltage Drop; 5.4.4 LTPS-TFT Pixel Compensation Circuit; 5.4.5 Circuit Integration by LTPS-TFT…”

Tabla de Contenidos: “…Active components; Semiconductor diodes; Bipolar transistors; Field effect transisters; Thyristors; Operational amplifiers; Comparators; Chapter 4. …”

Tabla de Contenidos: “…2.1 Issues and Challenges 2.1.1 Closing the Technology Gaps; 2.1.2 Always On, Always Connected: Paradox of the Portable Age; 2.1.3 Balancing Battery Life with Performance and Cost; 2.2 Power versus Energy Types; 2.2.1 The Elements Power Consumption; 2.2.2 Elements of Dynamic and Static Power; 2.3 Hierarchy of Energy Conservation Techniques; 2.4 Low Power Process and Transistor Technology; 2.4.1 Process Technology Scaling; 2.4.2 Transistors and Interconnects; 2.5 Low Power Packaging Techniques; 2.5.1 Introduction; 2.5.2 Systems-in-Package; 2.5.3 Package-on-Package; 2.5.4 SiP versus PoP…”

Tabla de Contenidos: “….) -- E.2. DIAGRAMA DE LOS TRANSISTORES ATERRADOS -- E.3. DIAGRAMA DE LOS TRANSISTORES FLOTANTES -- E.4. …”

Tabla de Contenidos: “…9.1 Introduction -- 9.2 Types of 2D Nanomaterials -- 9.3 Methods for the Synthesis of 2D Nanomaterials -- 9.4 Mechanism of Cancer Theranostics -- 9.5 Applications of 2D Nanomaterials -- 9.6 Conclusion -- References -- Chapter 10 Recent Advances in Functional 2D Materials for Field Effect Transistors and Nonvolatile Resistive Memories -- 10.1 Introduction to 2D Materials -- 10.2 Electronic Band Structure in 2D Materials -- 10.3 Electronic Transport Properties of 2D Materials -- 10.4 Two‐Dimensional Materials in Field Effect Transistors -- 10.4.1 Field Effect Transistors -- 10.4.2 The Rise of 2D Materials Research in FETs -- 10.4.3 Graphene‐Based Field Effect Transistors -- 10.4.4 2D Transition Metal Dichalcogenides (TMDCs) in Transistors -- 10.5 Two‐Dimensional Materials as Nonvolatile Resistive Memories -- 10.5.1 Nonvolatile Resistive Memories Based on Graphene and Its Derivatives -- 10.5.2 Resistive Switching Memories in 2D Materials "Beyond" Graphene -- 10.5.2.1 Solution‐Processed MoS2‐Based Resistive Memories -- 10.5.2.2 Solution‐Processed Black Phosphorous Nonvolatile Resistive Memories -- 10.5.2.3 Emerging NVM Based on Hexagonal Boron Nitride (h‐BN) -- 10.6 Conclusions and Outlook -- References -- Chapter 11 2D Advanced Functional Nanomaterials for Cancer Therapy -- 11.1 Introduction -- 11.2 2D Nanomaterials Classification -- 11.2.1 Graphene Family Nanomaterials -- 11.2.2 Transition Metal Dichalcogenides (TMDs) -- 11.2.3 Layered Double Hydroxides (LDHs) -- 11.2.4 Carbonitrides (MXenes) -- 11.2.5 Black Phosphorus (BP) -- 11.3 Cancer Therapy -- 11.3.1 Mechanism of Action in Cancer Therapy -- 11.3.1.1 Mode of Action of 2D Nanomaterials -- 11.3.2 Photodynamic Therapy for Cancer Cell Treatment -- 11.3.2.1 Mechanism of Photodynamic Therapy -- 11.3.2.2 2D Nanomaterials as Photosensitizer for PDT…”

Tabla de Contenidos: “…The Target; 2.1. CMOS Transistor; 2.2. Programmable Logic Devices; 2.3. Field-Programmable Gate Array; 2.4. …”

Tabla de Contenidos: “…Switching Basics and More; Shopping List: Experiments 6 Through 11; Experiment 6: Very Simple Switching; Experiment 7: Relay-Driven LEDs; Experiment 8: A Relay Oscillator; Experiment 9: Time and Capacitors; Experiment 10: Transistor Switching; Experiment 11: A Modular Project; 3. …”

“…The book aims at demonstrating how new hardware/software co-design solution can be proposed to ef-fectively mitigate reliability degradation such as transistor aging, processor variation, temperature effects, soft errors, etc. …”

Tabla de Contenidos: “…Inverter switching devices -- 2.6.1. Bipolar junction transistor (BJT) -- 2.6.2. Metal oxide semiconductor field effect transistor (MOSFET) -- 2.6.3. …”

Tabla de Contenidos: “…3.2.4 Accumulation versus Inversion3.3 Double Gate; 3.4 DTMOS; 3.4.1 Basic Performance; 3.4.2 Second-Order Effects; 3.5 Scaling Trends; 3.6 Single Electron Transistors (SET); 3.7 Electrostatic Discharge (ESD); 3.8 Temperature Dependence; 3.8.1 Noise; 3.9 Sensitivity; 3.10 Radiation Effects; 3.11 Summary; References; Problems; 4 Fundamentals of SOI CMOS Circuits; 4.1 Basic Circuit Issues; 4.1.1 Layout; 4.1.2 High Speed and Low Power; 4.1.3 Floating Body; 4.1.4 Self-Heating; 4.2 Floating Body Effects; 4.2.1 Static Logic Circuits; 4.2.2 Pass Gate Transistors; 4.2.3 Switch Network Logic (SNL)…”

Tabla de Contenidos: “…Cover -- Copyright -- Dedication -- Contents -- Preface -- Acknowledgements -- About the Author -- Chapter 1: Fundamentals of Integrated Circuits -- 1.1 Introduction -- 1.2 History -- 1.3 Introduction to ICs -- 1.4 Classification of ICs -- 1.5 Advantages of IC Over Discrete Components -- 1.6 Basic Concepts of IC Fabrication Using Monolithic IC Technology -- 1.7 Fabrication Process of a Simple N-type MOSFET -- 1.8 Basic Structural Details of MOSFET (MOSFET Fabrication in IC Form) -- 1.9 Semiconductor Diode -- 1.10 Integrated Circuit (IC) Resistors and Capacitors -- 1.11 Junction Field Effect Transistor (n-Channel Fet) -- 1.12 Bipolar Junction Transistor -- 1.13 Application-specific IC -- 1.14 IC Assembly and Packaging -- 1.15 Overview and Interpretation of Data Sheets of Operational Amplifiers -- 1.16 Device Identification -- 1.17 Pin Identification and Temperature Ranges -- Summary -- Questions for Practice -- Chapter 2: Fundamentals of Operational Amplifiers -- 2.1 Introduction -- 2.2 Introduction to Operational Amplifier -- 2.3 Block Diagram of an Operational Amplifier -- 2.4 BJT (Bipolar Junction Transistor) Differential Amplifier -- 2.5 Different Methods to Improve CMRR of Differential Amplifier -- 2.6 Basic Building Blocks of an Operational Amplifier -- 2.7 Analysis of Ideal Operational Amplifier -- 2.8 Pin Configuration of Operational Amplifiers μA 741 IC -- 2.9 Schematic Diagram of Operational Amplifier -- 2.10 Characteristic Features of an Ideal Operational Amplifier -- 2.11 Common-Mode Rejection Ratio (CMRR) -- 2.12 Input Bias and Offset Current -- 2.13 Output Offset Voltage -- 2.14 Minimization (Elimination) of Output Offset Voltage -- 2.15 Maximum Ratings of Operational Amplifier -- 2.16 Frequency Responses of Operational Amplifiers -- 2.17 Effect of Finite GBP on Integrated Circuits -- 2.18 Powering OP Amps…”

Tabla de Contenidos: “…3.4 Electronic Design Automation (EDA) -- 3.4.1 System-Level Design -- 3.4.2 Logic Synthesis and Physical Design -- 3.4.3 Test, Diagnosis, and Validation -- 3.5 Verification -- 3.6 Challenges -- 3.7 Conclusion -- References -- Chapter 4 IoT-Based Smart Home Security Alert System for Continuous Supervision -- 4.1 Introduction -- 4.2 Literature Survey -- 4.3 Results and Discussions -- 4.3.1 Raspberry Pi-3 B+Module -- 4.3.2 Pi Camera -- 4.3.3 Relay -- 4.3.4 Power Source -- 4.3.5 Sensors -- 4.3.5.1 IR &amp -- Ultrasonic Sensor -- 4.3.5.2 Gas Sensor -- 4.3.5.3 Fire Sensor -- 4.3.5.4 GSM Module -- 4.3.5.5 Buzzer -- 4.3.5.6 Cloud -- 4.3.5.7 Mobile -- 4.4 Conclusions -- References -- Chapter 5 A Detailed Roadmap from Conventional-MOSFET to Nanowire-MOSFET -- 5.1 Introduction -- 5.2 Scaling Challenges Beyond 100nm Node -- 5.3 Alternate Concepts in MOFSETs -- 5.4 Thin-Body Field-Effect Transistors -- 5.4.1 Single-Gate Ultrathin-Body Field-Effect Transistor -- 5.4.2 Multiple-Gate Ultrathin-Body Field-Effect Transistor -- 5.5 Fin-FET Devices -- 5.6 GAA Nanowire-MOSFETS -- 5.7 Conclusion -- References -- Chapter 6 Gate All Around MOSFETs-A Futuristic Approach -- 6.1 Introduction -- 6.1.1 Semiconductor Technology: History -- 6.2 Importance of Scaling in CMOS Technology -- 6.2.1 Scaling Rules -- 6.2.2 The End of Planar Scaling -- 6.2.3 Enhance Power Efficiency -- 6.2.4 Scaling Challenges -- 6.2.4.1 Poly Silicon Depletion Effect -- 6.2.4.2 Quantum Effect -- 6.2.4.3 Gate Tunneling -- 6.2.5 Horizontal Scaling Challenges -- 6.2.5.1 Threshold Voltage Roll-Off -- 6.2.5.2 Drain Induce Barrier Lowering (DIBL) -- 6.2.5.3 Trap Charge Carrier -- 6.2.5.4 Mobility Degradation -- 6.3 Remedies of Scaling Challenges -- 6.3.1 By Channel Engineering (Horizontal) -- 6.3.1.1 Shallow S/D Junction -- 6.3.1.2 Multi-Material Gate -- 6.3.2 By Gate Engineering (Vertical)…”