“…Exige poco: doce mil pesetas y que le dejen llevar siempre el transistor colgado de bandolera. Fracasa por su torpeza, y vuelve al pueblo en compañía de su novio, fracasado también en la capital. …”

“…Nombre de technologies modernes (le transistor ou l’imagerie médicale par résonance magnétique nucléaire, par exemple) ont pour origine des découvertes fondamentales dans ce domaine. …”

“…You'll learn about TTL (Transistor-Transistor Logic), and see what the ubiquitous 7400 series logic chips actually do with the TTL chip tester you’ll build. …”

“…The book will teach you the fundamentals of computer systems including transistors, logic gates, sequential logic, and instruction operations. …”

Tabla de Contenidos: “…About the Editor vii -- Preface to "Radiation Tolerant Electronics, Volume II" ix -- Radiation-Tolerant Electronics 1 -- SEU Tolerance Efficiency of Multiple Layout-Hardened 28 nm DICE D Flip-Flops 5 -- Novel Radiation-Hardened High-Speed DFF Design Based on Redundant Filter and Typical Application Analysis 17 -- A Fully Polarity-Aware Double-Node-Upset-Resilient Latch Design 25 -- TID Sensitivity Assessment of Quadrature LC-Tank VCOs Implemented in 65-nm CMOS Technology 37 -- Radiation-Tolerant All-Digital PLL/CDR with Varactorless LC DCO in 65 nm CMOS 51 -- Novel Full TMR Placement Techniques for High-Speed Radiation Tolerant Digital Integrated Circuits 67 -- A High-Reliability Redundancy Scheme for Design of Radiation-Tolerant Half-Duty Limited DC-DC Converters 77 -- A Virtual Device for Simulation-Based Fault Injection 97 -- Comparison of the Total Ionizing Dose Sensitivity of a System in Package Point of Load Converter Using Both Component- and System-Level Test Approaches 111-- Radiation Qualification by Means of the System-Level Testing: Opportunities and Limitations -- TAISAM: A Transistor Array-Based Test Method for Characterizing Heavy Ion-Induced Sensitive Areas in Semiconductor Materials 139 -- Comparison of Total Ionizing Dose Effects in 22-nm and 28-nm FD SOI Technologies 149 -- Quantitative Research on Generalized Linear Modeling of SEU and Test Programs Based on Small Sample Data 161.…”

Tabla de Contenidos: “…Specific configurations for transistors -- 1.5. Wideband amplification -- 1.6. Differential amplifier -- 1.7. …”

Tabla de Contenidos: “…3.2 The Drude model3.3 Surface plasmon polaritons on planar surfaces; 3.4 Multilayered structures; 3.5 New trends in terahertz plasmonics; 3.6 Acknowledgments; 3.7 References; 4Fundamental aspects of terahertz near-field imaging and sensing; 4.1 Introduction; 4.2 Terahertz near-field measurements; 4.3 Near-fields of various subwavelength holes; 4.4 Kirchhoff formalism for near-field estimate; 4.5 Conclusions; 4.6 References; 5Field effect transistors for terahertz applications; 5.1 Introduction; 5.2 Plasma waves in low-dimensional structures…”

Tabla de Contenidos: “…front cover; copyright; front matter; About the author; table of contents; Preface; body; 1: Basic MOS Device Physics; 1.1 Introduction; Chapter Outline; 1.2 MOS Transistors; Basic Operation; Scaling of MOS Transistors; 1.3 MOSFET Switches; Switch On-Resistance; Charge Injection; 1.4 MOSFET Capacitors; References; 2: Operational Amplifiers; 2.1 Introduction; Chapter Outline; 2.2 Two-Stage Op-Amps; 2.3 Telescopic and Folded-Cascode Op-Amps; Appendix 2.1; References; 3: Switched-Capacitor Building Blocks; 3.1 Introduction; Chapter Outline; 3.2 Switched-Capacitor Resistor Simulation…”

Tabla de Contenidos: “…Pulse generator circuits; Pulse generator basics; Edge-detector circuits; Circuit variants; Transistor monostables; Electronic triggering; 4001B/4011B CMOS monostable circuits…”

Tabla de Contenidos: “…12.3 Memory Select Device Options -- 12.4 Challenges of Memory Select Devices -- 12.5 Summary -- References -- Chapter 13: Emerging Memory Devices: Assessment and Benchmarking -- 13.1 Introduction -- 13.2 Common Emerging Memory Terminology and Metrics -- 13.3 Redox RAM -- 13.4 Emerging Ferroelectric Memories -- 13.5 Mott Memory -- 13.6 Macromolecular Memory -- 13.7 Carbon-based Resistive Switching Memory -- 13.8 Molecular Memory -- 13.9 Assessment and Benchmarking -- 13.10 Summary and Conclusions -- Acknowledgments -- References -- Part Three: Nanoelectronic Logic and Information Processing -- Chapter 14: Re-Invention of FET -- 14.1 Introduction -- 14.2 Historical and Future Trend of MOSFETs -- 14.3 Near-term Solutions -- 14.4 Long-term Solutions -- 14.5 Summary -- References -- Chapter 15: Graphene Electronics -- 15.1 Introduction -- 15.2 Properties of Graphene -- 15.3 Graphene MOSFETs for Mainstream Logic and RF Applications -- 15.4 Graphene MOSFETs for Nonmainstream Applications -- 15.5 Graphene NonMOSFET Transistors -- 15.6 Perspectives -- Acknowledgment -- References -- Chapter 16: Carbon Nanotube Electronics -- 16.1 Carbon Nanotubes - The Ideal Transistor Channel -- 16.2 Operation of the CNTFET -- 16.3 Important Aspects of CNTFETs -- 16.4 Scaling CNTFETs to the Sub-10 Nanometer Regime -- 16.5 Material Considerations -- 16.6 Perspective -- 16.7 Conclusion -- References -- Chapter 17: Spintronics -- 17.1 Introduction -- 17.2 Spin Transistors -- 17.3 Magnetic Logic Circuits -- 17.4 Summary -- References -- Chapter 18: NEMS Switch Technology -- 18.1 Electromechanical Switches for Digital Logic -- 18.2 Actuation Mechanisms -- 18.3 Electrostatic Switch Designs -- 18.4 Reliability and Scalability -- References -- Chapter 19: Atomic Switch -- 19.1 Chapter Overview -- 19.2 Historical Background of the Atomic Switch…”

Tabla de Contenidos: “…3.2.2.1 Adaptive interpolation -- 3.2.2.2 Dynamic LUT inversion -- 3.2.3 Analysis of the Quantization Effects -- 3.3 Predistortion Self-Calibration -- 3.3.1 Effect of Temperature Variations on Predistortion -- 3.4 Interpolative Filter -- 3.5 Polar Bandwidth Expansion -- Chapter 4: RF front-end (RFDAC) of the polar transmitter -- 4.1 Overview of the RF Front-End -- 4.2 Σ∆ Amplitude Modulation -- 4.2.1 Σ∆ Overview -- 4.2.2 Digital Design -- 4.2.3 Transfer Function and Spectrum -- 4.3 Digital Pre-PA -- 4.3.1 Overview of DPA Functionality -- 4.3.2 Analysis of DPA Quantization Noise -- 4.3.3 DPA Structural Design -- 4.4 DPA Transistor Mismatches -- 4.4.1 Amplitude Mismatch -- 4.4.2 Phase Mismatch -- 4.5 Key Categories of Mismatches and DEM -- 4.5.1 Key Categories -- 4.5.1.1 MSB (4x) transistor mismatch -- 4.5.1.2 Unit (1x) transistor mismatch -- 4.5.1.3 Systematic mismatch between 1x and 4x transistors -- 4.5.2 Simulation-Based Specifications -- 4.5.3 Dynamic Element Matching -- 4.5.4 Measurement Results -- 4.6 Clock Delay Alignment -- 4.6.1 Explanation of the Problem -- 4.6.2 Self-Calibration and Compensation Mechanism -- 4.7 Analysis of Parasitic Coupling -- 4.7.1 Possible Coupling Paths -- 4.7.2 A Novel Method of Characterizing Σ∆ Parasitic Coupling Using Idle-Tones -- 4.7.3 Relationship Between Idle Tones and Σ∆ Parasitic Coupling -- Chapter 5: Simulation and measurement results of the polar transmitter -- 5.1 Simulation Results -- 5.2 Measurement Results -- 5.2.1 Predistortion -- 5.2.2 Transmitter Close-In Performance -- 5.2.3 Transmitter Wideband Noise Performance -- 5.2.4 Performance Comparison -- 5.3 Conclusion -- Chapter 6: Idea of all-digital I/Q modulator -- 6.1 Concept of Digital I/Q Transmitter -- 6.2 Orthogonal Summing Operation of RFDAC -- 6.3 Conclusion -- Chapter 7: Orthogonal summation: A 2x3-bit all-digital I/Q RFDAC…”

Tabla de Contenidos: “…10.12 Offset Voltage, Bias Current, and Offset Current -- Summary -- Problems -- Chapter 11 Field-Effect Transistors -- 11.1 NMOS and PMOS Transistors -- 11.2 Load-Line Analysis of a Simple NMOS Amplifier -- 11.3 Bias Circuits -- 11.4 Small-Signal Equivalent Circuits -- 11.5 Common-Source Amplifiers -- 11.6 Source Followers -- 11.7 CMOS Logic Gates -- Summary -- Problems -- Chapter 12 Bipolar Junction Transistors -- 12.1 Current and Voltage Relationships -- 12.2 Common-Emitter Characteristics -- 12.3 Load-Line Analysis of a Common-Emitter Amplifier -- 12.4 pnp Bipolar Junction Transistors -- 12.5 Large-Signal DC Circuit Models -- 12.6 Large-Signal DC Analysis of BJT Circuits -- 12.7 Small-Signal Equivalent Circuits -- 12.8 Common-Emitter Amplifiers -- 12.9 Emitter Followers -- Summary -- Problems -- Chapter 13 Operational Amplifiers -- 13.1 Ideal Operational Amplifiers -- 13.2 Inverting Amplifiers -- 13.3 Noninverting Amplifiers -- 13.4 Design of Simple Amplifiers -- 13.5 OP-AMP Imperfections in the Linear Range of Operation -- 13.6 Nonlinear Limitations -- 13.7 DC Imperfections -- 13.8 Differential and Instrumentation Amplifiers -- 13.9 Integrators and Differentiators -- 13.10 Active Filters -- Summary -- Problems -- Chapter 14 Magnetic Circuits and Transformers -- 14.1 Magnetic Fields -- 14.2 Magnetic Circuits -- 14.3 Inductance and Mutual Inductance -- 14.4 Magnetic Materials -- 14.5 Ideal Transformers -- 14.6 Real Transformers -- Summary -- Problems -- Chapter 15 DC Machines -- 15.1 Overview of Motors -- 15.2 Principles of DC Machines -- 15.3 Rotating DC Machines -- 15.4 Shunt-Connected and Separately Excited DC Motors -- 15.5 Series-Connected DC Motors -- 15.6 Speed Control of DC Motors -- 15.7 DC Generators -- Summary -- Problems -- Chapter 16 AC Machines -- 16.1 Three-Phase Induction Motors…”

“…El oyente tradicional sigue pegado al transistor pero también han surgido nuevas audiencias y modos de consumir contenidos radiofónicos que deben ser tenidos en cuenta por los responsables de la industria radiofónica. …”

“…An ion-sensitive field-effect transistor (ISFET) array and a charge-coupled device (CCD) ion image sensor are examples of arrayed sensors. …”

Tabla de Contenidos: “…Introduction ; 2. Ultimate MOS transistors ; 3. Small slope switches ; 4. …”

Tabla de Contenidos: “…Electronic Devices; 4.1 Introduction; 4.2 Rectifiers; 4.3 Field-Effect Transistors; References; Chapter 5. Electromechanical Devices; 5.1 Bending; 5.2 Uniaxial and Torsional Strain; 5.3 Radial Deformation; 5.4 Devices; References; Chapter 6. …”

Tabla de Contenidos: “…Using Rechargeable Batteries and Professional Transformers Connecting Through Circuit Breakers and GFCI Outlets; Saving the Ground Prong; Disconnecting Power; Steering Clear of Dangerous Robots; Sizing Up Motors; Lighting Up ; Staying Rested and Level-Headed; Chapter 4: Digital Multimeter; Must-Have Features; Digital; Digits ; DC Voltage ; DC Current ; Resistance ; Probes or Leads ; Overload/Fuse Protection ; Nice-To-Have Features; Capacitance ; Diode ; Continuity ; Frequency ; Duty Cycle ; Autoranging ; Auto Power Off ; Transistor ; Dual Display ; Maximum; Minimum…”

Tabla de Contenidos: “…-- Building an M5Stack Core Snap Circuits numbers and letters device -- Game selection procedure -- The M5Stack Core controller's software -- Building an M5Stack Core Snap Circuits alarm device -- Building an M5Stack Core Snap Circuits counter with a sound device -- Summary -- Interactive quiz answers -- Chapter 5: Solderless Breadboarding with the M5Stack -- Technical requirements -- An introduction to electronic interfacing circuits -- Building a discrete transistor LED electronic flasher -- Building a discrete transistor DC motor driver circuit -- Building a littleBits temperature sensor M5Stack Core simulator monitor -- An M5Stack controller littleBits LED flasher -- Summary -- Interactive quiz answers -- Quiz answers -- Chapter 6: M5Stack and Arduino -- Technical requirements -- M5Stack Core2 touchscreen UI controls introduction -- Building a touch control inverting switch -- Building a touch control counter -- Building a touch control relay controller -- Building a touch control LED dimmer controller -- Summary -- Interactive quiz answers -- Quiz answers -- Part 3: M5Stack IoT Projects -- Chapter 7: Working with M5Stack and Bluetooth -- Technical requirements -- The ESP32 microcontroller Bluetooth chipset -- UiFlow BLE coding blocks pallet overview -- Detecting an M5Stack Core Bluetooth signal with the Nordic Semiconductor nRF toolbox -- Building an M5Stack Bluetooth messenger device…”

Tabla de Contenidos: “…Experimental requirements; 4.4. Strained silicon transistors with recessed sources and drains stressors; 4.4.1. …”

Tabla de Contenidos: “…Logic Diagrams and Machines; Chapter 27. Transistors of the Future; Chapter 28. Protein-Based Switches and Nanotechnology; Chapter 29. …”