Materias: “…Semiconductors Circuits…”

Materias: “…Semiconductors Electric properties Periodicals…”

Tabla de Contenidos: “…Chapter 1 Introduction to Organic-Inorganic HeterojunctionChapter 2 Energy-Level Alignment at Organic-Inorganic HeterojunctionsChapter 3 Molecular Layer Deposition of Organic-Inorganic Hybrid MaterialsChapter 4 Scanning Tunneling Microscope and Spectroscope on Organic-Inorganic Material HeterojunctionChapter 5 Organic-Inorganic Semiconducting Nanomaterial HeterojunctionsChapter 6 Organic-Inorganic Heterojunction NanowiresChapter 7 Electroluminescence of Organic Molecular Junction in Scanning Tunneling MicroscopeChapter 8 Recent Research Progress on Organic-Inorganic Hybrid Solar CellsChapter 9 Nanogenerators Based on Organic-Inorganic Heterojunction MaterialsChapter 10 Organic-Inorganic Semiconductor Heterojunctions for Hybrid Light-Emitting DiodesChapter 11 Organic-Inorganic Semiconductor Heterojunctions for Resistive Switching MemoriesChapter 12 Optoelectronic Sensors for Health MonitoringChapter 13 Organic-Inorganic Semiconductor Heterojunction PhotocatalystsIndex…”

“…This OECD Emission Scenario Document (ESD) provides information on the sources, use patterns, and potential release pathways of chemicals used as chemical vapour deposition (CVD) precursors in the semiconductor industry. The document presents standard approaches for estimating environmental releases and occupational exposures, and discusses the typical engineering controls used to mitigate exposure to CVD precursors…”

“…Semiconductors Industry Profile…”

“…Actually, lighting industry, RF defene industry, and 5G mmWave telecommunication systems are driving forces for further intense research in order to reach full potential of GaN-based semiconductors. In the literature, there is a number of review papers and publications reporting technology progress and indicating future trends. …”

Materias:

Tabla de Contenidos: “…Chapter 9 Gate Dielectrics for 4H‐SiC Power Switches: Understanding the Structure and Effects of Electrically Active Point Defects at the 4H‐SiC/SiO2 Interface -- 9.1 Introduction -- 9.2 Electrical Impact of Traps on MOSFET Characteristics -- 9.2.1 Sub threshold Sweep Hysteresis -- 9.2.2 Preconditioning Measurement -- 9.2.3 Bias Temperature Instability -- 9.2.4 Reduced Channel Electron Mobility -- 9.3 Microscopic Nature of Electrically Active Traps Near the Interface -- 9.3.1 The PbC Defect and the Subthreshold Sweep Hysteresis -- 9.3.2 The Intrinsic Electron Trap and the Reduced MOSFET Mobility -- 9.3.3 Point Defect Candidates for BTI -- 9.4 Conclusions and Outlook -- References -- Chapter 10 Epitaxial Graphene on Silicon Carbide as a Tailorable Metal-Semiconductor Interface -- 10.1 Introduction -- 10.2 Epitaxial Graphene as a Metal -- 10.3 Fabrication and Structuring of Epitaxial Graphene -- 10.3.1 Epitaxial Growth by Thermal Decomposition -- 10.3.2 Intercalation -- 10.3.3 Structuring of Epitaxial Graphene Layers and Partial Intercalation -- 10.4 Epitaxial Graphene as Tailorable Metal/Semiconductor Contact -- 10.4.1 Ohmic Contacts -- 10.4.2 Schottky Contacts -- 10.5 Monolithic Epitaxial Graphene Electronic Devices and Circuits -- 10.5.1 Discrete Epitaxial Graphene Devices -- 10.5.2 Monolithic Integrated Circuits -- 10.6 Novel Experiments on Light-Matter Interaction Enabled by Epitaxial Graphene -- 10.6.1 High‐Frequency Operation and Ultimate Speed Limits of Schottky Diodes -- 10.6.2 Transparent Electrical Access to SiC for Novel Quantum Technology Applications -- 10.7 Conclusion -- Acknowledgments -- References -- Chapter 11 Device Processing Chain and Processing SiC in a Foundry Environment -- 11.1 Introduction -- 11.2 DMOSFET Structure -- 11.3 Process Integration of SiC MOSFETs -- 11.3.1 Lithography -- 11.3.2 SiC Etching…”

Materias: “…Industria de semiconductores innovaciones tecnológicas…”