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41Publicado 2006Tabla de Contenidos: “…Projectes dels arquitectes: All Zone; Anupama Kundoo; Area Design; atelier OPA; Budi Pradono Architects; CARR Design; CL3; Cream; Curiosity: DAtrans Urban Architecture; Adam Dettick; EDGE Design; Environmental Planning Studio; FOBA; ga.a architecs; Hashimoto Yukio Design Studio; hima; Kawatsu; Hirotaka Satoh Architecture & Design; Hs WorkShop-Asia; HYLA Architects; Iroje Architects & Planners; Jason+Caroline Design Ltd; Stephen Jolson; KTA; Laurence Liauw Architect; behet bondzio lin; love the life; M2NAA; marc & chantal design; Mathew & Ghosh Architects; Andra Matin; Miyahara Architect Office; Muramatsu Architects; Kiyonobu Nakagame; nendo; orbit design studio; Paul Cha Architect; Paul Morgan Architects; RAA; rma; staughton architects; Studio DADO; Issei Suma; Suppose design office; Joseph Sy & Associates; Tezuka Architets with Masahiro Ikeda; TONERICO: INC.; TURENSCAPE; UID; WOHA; Yo Yamagata; Zenin Adrian Design lab; ZLG…”
Libro -
42por Garcia Burciaga de Cepeda, MargaritaTabla de Contenidos: “….; INTRODUCCIÓN; EJEMPLOS; PREGUNTAS; PROBLEMAS; BIBLIOGRAFÍA; MÉTODO DE WKB PARA DETERMINAR LA TRANSPARENCIA DE LAS BARRERAS DE POTENCIAL; CONSTANTES FÍSICAS; CUADRIPOLOS; PROPIEDADES DE LOS SEMICONDUCTORES; PROPIEDADES DEL Ge, Si y GaAs &T= 300° K; PROPIEDADES DEL Ge, Si y GaAs a T= 300°K (cont. . .); TABLA DE CONVERSIÓN DE FACTORES; CURVA NORMALIZADA DE LA FUNCIÓN ERROR COMPLEMENTARIA Y LA DISTRIBUCIÓN GAUSSIANA; PRINCIPALES DISPOSITIVOS SEMICONDUCTORES DISCRETOS; CALCULO DE DISIPADORES EN FUNCIÓN DEL ÁREA DE LAS PLACAS DE ALUMINIO…”
Publicado 2001
Libro electrónico -
43Publicado 2021Tabla de Contenidos: “…Summary and Closing Comments 945 References 946 22 ESD in GaAs 951 22.1 Gallium Arsenide Technology and ESD 951 22.2 Gallium Arsenide Energy-to-Failure, and Power-to-Failure 951 22.3 Gallium Arsenide ESD Failures in Active and Passive Elements 954 22.4 Gallium Arsenide HBT Devices and ESD 955 22.5 Gallium Arsenide HBT Device ESD Results 956 22.6 Gallium Arsenide HBT Diode Strings 957 22.7 Gallium Arsenide HBT-based Passive Elements 959 22.8 GaAs HBT Base-Collector Varactor 959 22.9 Gallium Arsenide Technology Table of Failure Mechanisms 960 22.10 Application - GaAs Power Amplifier in a Cell Phone 961 22.11 Summary and Closing Comments 965 Questions 965 References 966 23 ESD in Bulk and SOI FINFET 971 23.1 Early FinFET Structures 971 23.2 FinFET Structure and Design Parameters 971 23.3 FinFET Parameters 973 23.4 Summary and Closing Comments 977 References 977 24 MEMs 979 24.1 Micro-electromechanical (MEM) Devices 979 24.2 ESD Concerns in Micro-electromechanical (MEM) Devices 980 24.3 Actuators 982 24.5 Micro-electromechanical (MEM) Mirrors 985 24.6 Summary and Closing Comments 989 References 989 25 Magnetic Recording 991 25.1 Magnetic Recording Technology 991 25.2 Summary and Closing Comments 995 References 995 26 Photomasks 1003 26.1 Photomasks and Reticles 1003 26.2 ESD Concerns in Photomasks 1003 26.3 Avalanche Breakdown in Photomasks 1004 26.4 Electrical Model in Photomasks 1007 26.5 Failure Defects in Photomasks 1008 26.6 Summary and Closing Comments 1011 References 1011 Appendix Table of Acronyms 1013 A Glossary of Terms - EMC Terminology 1015 B Appendix B. …”
Libro electrónico -
44
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45por FTM-5Tabla de Contenidos: “…; Fermi Liquid Behavior of GaAs Quantum Wires; 2 BIOLOGY: WE ARE ALL ZOA; Towards Molecular Medicine…”
Publicado 2007
Libro electrónico -
46Publicado 2019“…All of them share a common point, that is, the interaction of a material with light, although many different materials are taken into account depending on the effect desired—from elemental semiconductors like silicon, to more complex compounds like CdTe or GaAs, to metal oxides like TiO2 and ZnO. Given the broadness of the field, a huge number of works fall within this topic, and new areas of discovery are constantly explored. …”
Libro electrónico -
47por Manganaro, GabrieleTabla de Contenidos: “…2.2.2 3G transmitter requirements2.2.2.1 Output power and gain control; 2.2.2.2 EVM and mask; 2.2.3 LTE transceiver requirements; 2.3 Handset calibration; 2.3.1 Factory calibrations; 2.3.2 Automatic calibrations; Conclusions; References; 3 Low-Noise Amplifiers for Cellular Wireless Infrastructure; Introduction; 3.1 LNA specifications; 3.2 pHEMT-GaAs-based LNAs; 3.2.1 Single-device LNA; 3.2.2 Cascode LNA; 3.2.3 Cascaded LNA; 3.2.4 MMIC LNA module; 3.3 Silicon-based LNAs; 3.3.1 Single-stage BiCMOS LNA; 3.3.2 Cascaded BiCMOS LNA; 3.3.3 Broadband BiCMOS LNA; 3.3.4 CMOS LNAs with sub-1 dB NF…”
Publicado 2013
Libro electrónico -
48Publicado 2023Tabla de Contenidos: “…. -- Suppressing the Effect of the Wetting Layer through AlAs Capping in InAs/GaAs QD -- Structures for Solar Cells Applications -- Reprinted from: Nanomaterials 2022, 12, 1368, doi:10.3390/nano12081368 95 -- Jaebaek Lee, Dong-Hwan Jeon, Dae-Kue Hwang, Kee-Jeong Yang, Jin-Kyu Kang, -- Shi-Joon Sung, Hyunwoong Park, et al. -- Atomic Layer Deposition of Ultrathin ZnO Films for Hybrid Window Layers for -- Cu(Inx,Ga1−x)Se2 Solar Cells -- Reprinted from: Nanomaterials 2021, 11, 2779, doi:10.3390/ nano11112779 111 -- Ovidiu Toma, Vlad-Andrei Antohe, Ana-Maria Panaitescu, Sorina Iftimie, -- Ana-Maria Radut ̆ ̧a, ̆ Adrian Radu, Lucian Ion, et al. -- Effect of RF Power on the Physical Properties of Sputtered ZnSe Nanostructured Thin Films for -- Photovoltaic Applications -- Reprinted from: Nanomaterials 2021, 11, 2841, doi:10.3390/nano11112841 121 -- Junyeong Lee, Jongbok Kim, Chang-Su Kim and Sungjin Jo -- Compact SnO2/Mesoporous TiO2 Bilayer Electron Transport Layer for Perovskite Solar Cells -- Fabricated at Low Process Temperature -- Reprinted from: Nanomaterials 2022, 12, 718, doi:10.3390/nano12040718 137 -- Chia-Hsun Hsu, Ka-Te Chen, Ling-Yan Lin, Wan-Yu Wu, Lu-Sheng Liang, Peng Gao, -- Yu Qiu, et al. -- Tantalum-Doped TiO2 Prepared by Atomic Layer Deposition and Its Application in Perovskite -- Solar Cells -- Reprinted from: Nanomaterials 2021, 11, 1504, doi:10.3390/nano11061504 147 -- Cinthya Anrango-Camacho, Karla Pavon-Ipiales, ́ Bernardo A. …”
Libro electrónico -
49por Raj, BalwinderTabla de Contenidos: “…Cover -- Series Page -- Title Page -- Copyright Page -- Contents -- Preface -- Chapter 1 Comparative Analysis of MOSFET and FinFET -- 1.1 Introduction -- 1.1.1 Scaling Issue -- 1.1.2 Problems in MOSFET -- 1.2 Double Gate -- 1.3 Advantages and Disadvantage of MOSFET -- 1.4 MOSFET Drawbacks -- 1.5 FinFET -- 1.6 SOI-FinFET -- 1.7 Issues with FinFET-Based Technology -- 1.8 Advantage of FinFET -- 1.9 Drawbacks of FinFET -- 1.10 Applications of FinFET Technology -- 1.11 Conclusion -- References -- Chapter 2 Nanosheet FET for Future Technology Scaling -- 2.1 Introduction -- 2.2 Device Description and Simulation Parameters -- 2.2.1 Analysis of the Results Obtained -- 2.2.2 Impact of Variation in Width Across Various Thickness Values on Device Characteristics -- 2.2.3 Transfer Characteristics -- 2.2.4 Impact of Geometrical Variations on ON Current -- 2.2.5 Impact of Geometrical Variations on OFF-Current -- 2.2.6 Impact of Geometrical Variations on Switching Ratio -- 2.2.7 Impact of Geometrical Variations on Threshold Voltage -- 2.2.8 Impact of Geometrical Variations on Subthreshold Swing -- 2.2.9 Impact of Geometrical Variations on DIBL -- 2.2.10 Comparison with Previous Works -- 2.3 Conclusions -- References -- Chapter 3 Comparison of Different TFETs: An Overview -- 3.1 Introduction -- 3.2 Tunnel FET -- 3.3 Gate Engineering -- 3.3.1 Oxide-Thickness and Dielectric-Constant of Gateoxide -- 3.3.2 Multiple Gates -- 3.3.3 Spacer Engineering -- 3.4 Tunneling-Junction Engineering -- 3.4.1 Doping of Source -- 3.4.2 Heterojunctions -- 3.5 Materials Engineering -- 3.5.1 Germanium -- 3.5.2 III-V Semiconductors -- 3.5.3 Nanowires -- 3.6 Conclusion -- References -- Chapter 4 GaAs Nanowire Field Effect Transistor -- 4.1 Introduction -- 4.1.1 Semiconductor Nanowires -- 4.1.2 Metal Nanowires -- 4.1.3 Oxide Nanowires -- 4.1.4 Hybrid Nanowires…”
Publicado 2024
Libro electrónico -
50Publicado 2017Tabla de Contenidos: “…3.3.3 Cruel, Unmanly, and Unchivalrous: The Military's Aversion to the Use of Poison -- 4 The Continuing Politicization of International Law: The Legal Assessment of War Crimes, 1918-1925 -- 4.1 Crime and Argument: The Intense Discourse After the End of World War I -- 4.2 Self-justifications: The Nationalist Polarization of International Law -- 4.3 Politicized Scholarship: No Mediation Possible -- 4.4 Reforms as Affirmation of the Prohibition of Poison in International Law -- 4.4.1 Asymmetric New Paths: The Prohibitions of the Production and Possession of Weapons in the Paris Peace Treaties of 1919 -- 4.4.2 Pacifist Efforts: Initiatives by the League of Nations -- 4.4.3 An Expression of the General Opinion of the Civilized World: The Washington Treaty of 1922 -- 4.4.4 Reassuring One's Principles: The Geneva Protocol on Poison Gas of 1925 -- 5 Summary: Expectations Regarding International Law -- References -- 8 Military-Industrial Interactions in the Development of Chemical Warfare, 1914-1918: Comparing National Cases Within the Technological System of the Great War -- Abstract -- 1 Introduction -- 2 The Western Front as a Technological Meta-System -- 3 Chemical Weapons as an Illustrative Case -- 4 Industrial Mobilization for Chemical Warfare: The Experimental Phase, 1914-15 -- 5 Scaling up, Innovation and Integration, 1915-17 -- 6 Culmination of the Chemical War, 1917-1918 -- 7 Concluding Reflections -- References -- Contexts and Consequences of Chemical Weapons -- 9 The Gas War, 1915-1918: If not a War Winner, Hardly a Failure -- Abstract -- 1 Introduction -- 2 Debate -- 3 Gas: Not a War Winner -- 4 The Challenge of Chemical Warfare -- 5 Effectiveness of the Gas War -- References -- 10 "Gas, Gas, Gaas!" The Poison Gas War in the Literature and Visual Arts of Interwar Europe -- Abstract -- Part I -- Part II -- References…”
Libro electrónico -
51Publicado 2024Tabla de Contenidos: “…Implementing sprinting -- Adding reverb zones -- Deeper SOLID refactoring -- Summary -- Part 5: Enhancing and Finishing Games -- Chapter 13: Implementing AI with Sensors, Behavior Trees, and ML-Agents -- Technical requirements -- Refactoring the 2D enemy systems to 3D with NavMesh -- Importing scripts from the 2D project -- Refactoring the PatrolWaypoints class for NavMesh -- Configuring the enemy NavMesh Agent (Prefab) -- Adding waypoints to the level and testing -- Dynamic enemies with sensors and behavior trees -- Creating sensory behaviors -- Wrangling behaviors with a behavior tree -- Introducing ML with ML-Agents -- Navigating training efficiency with NavMesh -- Examining an ML-Agents setup -- Summary -- Chapter 14: Entering Mixed Reality with the XR Interaction Toolkit -- Technical requirements -- Introduction to MR and development frameworks -- XR Interaction Toolkit (XRI) -- AR Foundation -- OpenXR: Meta package -- Designing a boss room -- Setting up the physical space -- Creating the Unity project -- Laying out the boss room scene -- Working with AR planes (AR Foundation) -- Spawning using planes with AR Plane Manager -- Instantiating on a table plane -- Instantiating using the floor plane -- Instantiating with wall planes -- Toggling MR visuals with XR Input -- Placing interactable objects in the world -- Making objects XR interactables -- Placing the modules in the room -- Making the module slots interactable -- Configuring the laser gun -- Implementing the boss room mechanics -- Solving the crystal modules puzzle -- Spawning enemies -- Completing the game loop -- Summary -- Chapter 15: Finishing Games with Commercial Viability -- Technical requirements -- Introducing GaaS - UGS -- Introducing Unity DevOps -- Introducing Unity LiveOps -- Safeguarding your investment! …”
Libro electrónico -
52por Epperlein, Peter W.Tabla de Contenidos: “…Possible Origins of the 193 cm-1 Mode in (Al)GaAs 8.1.4. Facet Disorder - Facet Temperature - Catastrophic Optical Mirror Damage Robustness Correlations 8.2. …”
Publicado 2013
Biblioteca Universitat Ramon Llull (Otras Fuentes: Universidad Loyola - Universidad Loyola Granada, Biblioteca de la Universidad Pontificia de Salamanca)Libro electrónico -
53Publicado 2023Tabla de Contenidos: “…3.4 Electronic Design Automation (EDA) -- 3.4.1 System-Level Design -- 3.4.2 Logic Synthesis and Physical Design -- 3.4.3 Test, Diagnosis, and Validation -- 3.5 Verification -- 3.6 Challenges -- 3.7 Conclusion -- References -- Chapter 4 IoT-Based Smart Home Security Alert System for Continuous Supervision -- 4.1 Introduction -- 4.2 Literature Survey -- 4.3 Results and Discussions -- 4.3.1 Raspberry Pi-3 B+Module -- 4.3.2 Pi Camera -- 4.3.3 Relay -- 4.3.4 Power Source -- 4.3.5 Sensors -- 4.3.5.1 IR & -- Ultrasonic Sensor -- 4.3.5.2 Gas Sensor -- 4.3.5.3 Fire Sensor -- 4.3.5.4 GSM Module -- 4.3.5.5 Buzzer -- 4.3.5.6 Cloud -- 4.3.5.7 Mobile -- 4.4 Conclusions -- References -- Chapter 5 A Detailed Roadmap from Conventional-MOSFET to Nanowire-MOSFET -- 5.1 Introduction -- 5.2 Scaling Challenges Beyond 100nm Node -- 5.3 Alternate Concepts in MOFSETs -- 5.4 Thin-Body Field-Effect Transistors -- 5.4.1 Single-Gate Ultrathin-Body Field-Effect Transistor -- 5.4.2 Multiple-Gate Ultrathin-Body Field-Effect Transistor -- 5.5 Fin-FET Devices -- 5.6 GAA Nanowire-MOSFETS -- 5.7 Conclusion -- References -- Chapter 6 Gate All Around MOSFETs-A Futuristic Approach -- 6.1 Introduction -- 6.1.1 Semiconductor Technology: History -- 6.2 Importance of Scaling in CMOS Technology -- 6.2.1 Scaling Rules -- 6.2.2 The End of Planar Scaling -- 6.2.3 Enhance Power Efficiency -- 6.2.4 Scaling Challenges -- 6.2.4.1 Poly Silicon Depletion Effect -- 6.2.4.2 Quantum Effect -- 6.2.4.3 Gate Tunneling -- 6.2.5 Horizontal Scaling Challenges -- 6.2.5.1 Threshold Voltage Roll-Off -- 6.2.5.2 Drain Induce Barrier Lowering (DIBL) -- 6.2.5.3 Trap Charge Carrier -- 6.2.5.4 Mobility Degradation -- 6.3 Remedies of Scaling Challenges -- 6.3.1 By Channel Engineering (Horizontal) -- 6.3.1.1 Shallow S/D Junction -- 6.3.1.2 Multi-Material Gate -- 6.3.2 By Gate Engineering (Vertical)…”
Libro electrónico -
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56Publicado 2010“…The volume contains 20 Chapters covering altogether many (although not all) semiconductors of technological interest, starting with the IV-IV group compounds (SiC and SiGe), carrying on with the binary and ternary compounds of the III-V (GaAs, AlGaAs, GaSb, InAs, GaP, InP, and GaN) and II-VI (HgTe, HgCdTe) families, the metal oxides (CuO, ZnO, ZnCoO, tungsten oxide, and PbTiO3), and finishing with Bi (a semimetal)…”
Libro electrónico -
57Publicado 2015“…There are at least three different IO voltage standards--3.3 V, 2.5 V, and 1.8 volumes And apart from the mainstream CMOS process, each foundry offers more options such as GaAs, SOI, and GaN; new, even more exotic materials are not far behind. …”
Libro electrónico -
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