“…If they can’t invent new processes or products, it’s simply not worth doing. Crazy as foxes, makers—working in the spirit of Tesla, Wozniak, Edison, Gates, Musk and many others—can bring sophisticated products to the people or to the market as fast or faster than large corporations. …”

“…He has led major IT infrastructure organizations at Hughes Aircraft, the City of Los Angeles, and Twentieth Century Fox. For nearly ten years, he managed the primary data center at Northrop Grumman, one of the world’s most advanced computer facilities. …”

“…The authors prove in plain English the vital role creative finance played in building America and why stifling innovation poses a risk to our financial future.” Brian Sullivan, Fox Business Financial innovation can drive social, economic, and environmental change, transforming ideas into new technologies, industries, and jobs. …”

“…Then, we explore IP-based communication in LAN and WAN, including 802.11ah, 5G LTE cellular, SigFox, and LoRaWAN. Next, we cover edge routing and gateways and their role in fog computing, as well as the messaging protocols of MQTT and CoAP. …”

“…Coverage includes • An overview of Ruby, explaining terminology and basic principles • Operations on low-level data types (numbers, strings, regular expressions, dates) • The new regular expression engine (Oniguruma) • Internationalization (I18N) and message catalogs in Ruby • Operations on hashes, arrays, and other data structures such as stacks, trees, and graphs • Working with general I/O, files, and persistent objects • Database coverage including MySQL, SQLite, Oracle, DBI, and more • Ruby-specific techniques in OOP and dynamic programming • Graphical interfaces in Ruby (Tk, GTK+, Fox, and Qt) • Working with Ruby threads for lightweight multitasking • Everyday scripting and system administration in Ruby • Working with image files, PDFs, YAML, XML, RSS, and Atom • Testing, debugging, profiling, and packaging Ruby code • Low-level network programming and client-server interaction • Web development tools including Rails, Nitro, Wee, IOWA, and more • Working with distributed Ruby, Rinda, and Ring • Ruby development tools such as IDEs, documentation tools, and more The source code for the book can be downloaded from www.rubyhacker.com Hal Fulton has worked for over 15 years with variousforms of Unix, including AIX, Solaris, and Linux. …”

“…Drug Enforcement Administration, Prudential, Transamerica, Fox Broadcasting, and the U.S. Navy. She travels throughout North America delivering seminars on Access and has authored 14 books and videos for Pearson, including Microsoft Access 2010 LiveLessons and Alison Balter’s Mastering Access 2007 Development . …”

“…Hoy día tal vez ningún conflicto entre nuestro país y su vecino del norte sea más lacerante que el de la migración de trabajadores ilegales, del cual se ocupa Francisco Alba, quien evalúa la estrategia de "diálogo" en la materia durante los gobiernos de Zedillo y Clinton, antecedente indispensable para juzgar el "entendimiento" posterior entre Fox y Bush, del que podría esperarse algo todavía pese a las adversas condiciones internacionales. …”

“…During the last 20+ years, he has designed databases on a wide range of platforms, including dBASE, FoxPro, SQL/DS, Lotus Approach, Lotus Notes, and, for the past 10 years, Microsoft Access. …”

“…–Jonathan Hoenig , Portfolio Manager, Capitalistpig Hedge Fund LLC and Fox News contributor “Curtis Faith’s new book Trading from Your Gut ...takes the insights derived from psychology, marries them to cogent observations by master traders like George Soros, and then superimposes them onto a series of analysis-based theories to deliver a cogent trading plan.” …”

“…--Greta Van Susteren, host of On the Record, Fox News Channel Few topics are as misunderstood today as the subject of money. …”

“…(formerly InfoTechnology Partners) in 1990, its client base has expanded to include major corporations and government agencies such as Cisco, Shell Oil, Accenture, AIG Insurance, Northrop, the Drug Enforcement Administration, Prudential Insurance, Transamerica Insurance, Fox Broadcasting, the United States Navy, University of Southern California, Massachusetts Institute of Technology, and others. …”

“…(formerly InfoTechnology Partners) in 1990, its client base has expanded to include major corporations and government agencies such as Cisco, Shell Oil, Accenture, AIG Insurance, Northrop, the Drug Enforcement Administration, Prudential Insurance, Transamerica Insurance, Fox Broadcasting, the United States Navy, University of Southern California, Massachusetts Institute of Technology, and others. …”

Acceso restringido usuarios UPSA

“…He is the author or contributor of several books, and has appeared on FOX Business News, National Public Radio, and other media outlets as an expert on cybersecurity. …”

“…He is the author or contributor of several books, and has appeared on FOX Business News, National Public Radio, and other media outlets as an expert on cybersecurity. …”

“…He is the author or contributor of several books and has appeared on FOX Business News, National Public Radio, and other media outlets as an expert on cybersecurity. …”

“…Consequently, the packed, five-day program will be presented with 1 doctoral consortium, 1 posters and demo session, 1 practitioner session, 2 interactive panels, 5 tutorials, 7 workshops, and most importantly, 18 paper sessions, with special features of three keynote speakers (Dr. Edward A. Fox, Dr. Peter Zhou, and Dr. Luo Si). During the conference, we will award three honors: the Vannevar Bush Best Paper Award, the Best Student Paper Award, and the Best Poster/Demo Award. …”

Tabla de Contenidos: “…LOCOS-bound Lateral N-Well to N-Well Bipolar ESD Element 738 16.13 LOCOS-bound Lateral N+ to N-well Bipolar ESD Element 738 16.14 LOCOS-bound Lateral pnp Bipolar ESD Element 739 16.15 LOCOS-bound Thick Oxide MOSFET ESD Element 739 16.16 Shallow Trench Isolation 739 16.17 STI-bound ESD Structures 741 16.18 Substrate Modeling - Electrical and Thermal Discretization 746 16.19 Heavily Doped Substrates 750 16.20 Retrograde Wells and ESD Scaling 766 16.21 Triple Well and Isolated MOSFET CMOS 775 16.22 Summary and Closing Comments 779 References 779 17 ESD in Silicon on Insulator 783 17.1 Silicon on Insulator (SOI) Technologies 783 17.2 Elimination of CMOS Latchup 784 17.3 Lack of Vertical Bipolar Transistors 785 17.4 Floating Gate Tie Downs 785 17.5 Physical Separation of MOSFETs from the Bulk Substrate 785 17.6 SOI ESD Design Fundamental Concepts 786 17.7 SOI Lateral Diode Structure 791 17.8 Transistors - Bulk versus SOI Technology 791 17.9 SOI Buried Resistors (BR) Elements 796 17.10 Dynamic Threshold MOS (DTMOS) SOI MOSFET 797 17.11 SOI P+ Body Contact Abutting n+ Drain 798 17.12 Transmission Line Pulse (TLP) Testing of SOI Diode Designs 798 17.13 SOI ESD with MOSFET Drain and Body Width Ratio Variation 799 17.14 SOI Dual-Gate MOSFET Structure 799 17.15 SOI ESD Design - Mixed Voltage T-Shape Layout Style 800 17.16 SOI ESD Design: Double Diode Network 802 17.17 Bulk to SOI ESD Design Remapping 803 17.18 SOI ESD Diode Design Parameters 804 17.19 SOI ESD Design in Mixed Voltage Interface Environments 808 17.20 Comparison of Bulk with SOI ESD Results 809 17.21 SOI ESD Design with Aluminum Interconnects 810 17.22 SOI ESD Design with Copper Interconnects 812 17.23 SOI ESD Design with Gate Circuitry 813 17.24 Summary and Closing Comments 815 References 815 18 ESD in Analog Circuits 821 18.1 Analog Design Circuits 821 18.2 Single-ended Receivers 822 18.3 Schmitt Trigger Receivers 822 18.4 Differential Receivers 822 18.5 Comparators 824 18.6 Current Sources 825 18.7 Current Mirrors 825 18.8 Widlar Current Mirror 826 18.9 Wilson Current Mirror 826 18.10 Voltage Regulators 827 18.11 Buck Converters 828 18.12 Boost Converters 828 18.13 Buck-Boost Converters 829 18.14 Cuk Converters 830 18.15 Voltage Reference Circuits 830 18.16 Brokaw Bandgap Voltage Reference 830 18.17 Converters 831 18.18 Analog-to-Digital Converter (ADC) 831 18.19 Digital-to-Analog Converters (DAC) 832 18.20 Oscillators 832 18.21 Phase Lock Loop (PLL) Circuits 832 18.22 Delay Locked Loop (DLL) 833 18.23 Analog and ESD Design Synthesis 833 18.24 Analog Chip Architecture - Separation of Analog Power from Digital Power, AVDD-DVDD 836 18.25 ESD Failure in Phase Lock Loop (PLL) and System Clock 837 18.26 ESD Failure in Current Mirrors 837 18.27 ESD Failure in Schmitt Trigger Receivers 838 18.28 ESD Design Practice - Prevent ESD Failure in Schmitt Trigger 840 18.29 Analog-Digital Architecture: Isolated Digital and Analog Domains 841 18.30 ESD Protection Solution - Connectivity of AVDD-to-VDD 842 18.31 ESD Solution: Connectivity of AVSS-to-DVSS 843 18.32 Digital and Analog Domain with ESD Power Clamps 843 18.33 Digital and Analog Domain with Master-Slave ESD Power Clamps 846 18.34 High Voltage, Digital, and Analog Domain Floorplan 846 18.35 Floor-planning of Digital and Analog 846 18.36 Inter-domain Signal Lines ESD Failures 849 18.37 Digital-to-Analog Signal Line ESD Failures 849 18.38 Digital-to-Analog Core Spatial Isolation 851 18.39 Digital-to-Analog Core Ground Coupling 851 18.40 Digital-to-Analog Core Resistive Ground Coupling 852 18.41 Digital-to-Analog Core Diode Ground Coupling 852 18.42 Domain-to-Domain Signal Line ESD Networks 852 18.43 Domain-to-Domain Third-party Coupling Networks 853 18.44 Domain-to-Domain Cross-domain ESD Power Clamp 854 18.45 Digital-to-Analog Domain Moat 855 18.46 Analog and ESD Circuit Integration 855 18.47 Integrated Body Ties 856 18.48 Self-Protecting vs Non-self Protecting Designs 856 References 856 19 ESD in RF CMOS 865 19.1 CMOS and ESD 865 19.2 RF CMOS 865 19.3 RF CMOS and ESD 865 19.4 RF CMOS ESD Failure Mechanisms 865 19.5 RF CMOS - ESD Device Comparisons 866 19.6 RF ESD Metrics 867 19.7 Grounded Gate n-channel MOSFET versus STI Diode 868 19.8 Silicon-controlled Rectifier 869 19.9 SCR versus GGNMOS 869 19.10 Shallow Trench Isolation and Polysilicon Gated Diodes 869 19.11 RF ESD Design 870 19.12 RF ESD Design Layout - Circular RF ESD Devices 870 19.13 Disadvantage of RF ESD Circular Element 871 19.14 RF ESD Design - ESD Wiring Design 872 19.15 RF ESD Design - Loading Capacitance 872 19.16 Metal Capacitance 873 19.17 Analog Metal (AM) 873 19.18 RF ESD Design Practices 874 19.19 RF Passives - ESD and Schottky Barrier Diodes 874 19.20 Schottky Barrier Diodes and Metallurgy 875 19.21 Silicon Germanium Schottky Barrier Diodes 876 19.22 Schottky Barrier RF ESD Design Practice 877 19.23 RF Passives - ESD and Inductors 877 19.24 Quality Factor, Q 878 19.25 Incremental Model of an Inductor 878 19.26 Inductor Coil Parameters 878 19.27 RF Passives - ESD and Capacitors 882 19.28 Capacitors and RF Applications 882 19.29 Capacitors in ESD Networks 882 19.30 Types of Radio Frequency Capacitors 883 19.31 Metal-Oxide-Semiconductor and Metal-Insulator-Metal Capacitors 883 19.32 Varactors and Hyper-abrupt Junction Varactor Capacitors 884 19.33 Metal-ILD-Metal Capacitors 884 19.34 Vertical Parallel Plate (VPP) Capacitors 884 19.35 Tips: ESD RF Design Practices for Capacitors 885 19.36 Summary and Closing Comments 886 Problems 886 References 888 20 ESD in Silicon Germanium 891 20.1 Heterojunctions Bipolar Transistors 891 20.2 Silicon Germanium 891 20.3 Silicon Germanium HBT Devices 892 20.4 Silicon Germanium Device Structure 893 20.5 Silicon Germanium Film Deposition 894 20.6 Silicon Germanium Emitter-Base Region 895 20.7 Silicon Germanium Physics 895 20.8 Silicon Germanium Bandgap 896 20.9 Silicon Germanium Intrinsic Temperature 896 20.10 Position-dependent Silicon Germanium Profile 896 20.11 Position-dependent Intrinsic Temperature 897 20.12 SiGe Collector Current with Graded Germanium Concentration 897 20.13 Silicon Germanium ESD and Time Constants 898 20.14 Silicon Germanium Base Transit Time 898 20.15 Silicon Germanium Breakdown Voltages 898 20.16 Silicon Germanium ESD Measurements 899 20.17 Silicon Germanium Collector-to-Emitter ESD Stress 899 20.18 Transmission Line Pulse Testing of Silicon Germanium HBT 899 20.19 Transmission Line Pulse (TLP) I-V Characteristic 899 20.20 Wunsch-Bell Characteristic of Silicon Germanium HBT 901 20.21 Comparison of Silicon Germanium HBT and Silicon BJT 901 20.22 Wunsch-Bell Characteristic of SiGe HBT versus Si BJT 902 20.23 Intrinsic Base Resistance in SiGe HBT 904 20.24 SiGe HBT Electro-thermal HBM Simulation of Collector-Emitter Stress 904 20.25 Silicon Germanium Transistor Emitter-Base Design 905 20.26 Epitaxial-Base Hetero-Junction Bipolar Transistor (HBT) Emitter-Base Design 907 20.27 Self-aligned Silicon Germanium HBT Device 907 20.28 Non-Self Aligned Silicon Germanium HBT 908 20.29 Emitter-Base Design RF Frequency Performance Metrics 908 20.30 SiGe HBT Emitter-Base Resistance Model 909 20.31 SiGe HBT Emitter-Base Design and Silicide Placement 909 20.32 Silicide Material and ESD 910 20.33 Titanium Silicide and ESD 911 20.34 Cobalt Salicide 913 20.35 Self-aligned (SA) Emitter Base Design 914 20.36 Non-Self Aligned (NSA) Emitter Base Design 917 20.37 Non-Self Aligned HBT Human Body Model (HBM) Step Stress 918 20.38 Transmission Line Pulse (TLP) Step Stress 918 20.39 RF Testing of SiGe HBT Emitter-Base Configuration 921 20.40 Unity Current Gain Cutoff Frequency - Collector Current Plots 923 20.41 f MAX and f T 924 20.42 Electrothermal Simulation of Emitter-Base Stress 925 20.43 Field-Oxide (FOX) Isolation Defined Silicon Germanium Heterojunction Bipolar Transistor HBM Data 926 20.44 Silicon Germanium HBT Multiple-emitter Study 927 20.45 RF ESD Design Practice 927 20.46 Silicon Germanium ESD Failure Mechanisms 928 20.47 Summary and Closing Comments 928 References 928 21 ESD in Silicon Germanium Carbon 935 21.1 Heterojunctions and Silicon Germanium Carbon Technology 935 21.2 Silicon Germanium Carbon 935 21.3 Silicon Germanium Carbon Collector-Emitter ESD Measurements 937 21.4 Silicon Germanium Transistor Emitter-Base Design 940 21.5 Silicon Germanium Carbon - ESD-Induced S-Parameter Degradation 943 21.6 Silicon Germanium Carbon ESD Failure Mechanisms 945 21.7.…”

“…He has testified before US Congress, his articles have been published on IT websites, and he has been sourced as an industry expert for CBS, ABC, CNN, Fox News and the New York Times. He has created more than 15 security-related courses and training classes for various companies and universities. …”

“…Pese a no detectar diferencias respecto al número de Tregs CD4+CD25+FoxP3+, los resultados descriptos sugieren que las CD con propiedades tolerogénicas inducidas por T. cruzi, in vitro diferencian células T CD4+ potencialmente supresoras. …”
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