“…After attending the University for Creative Arts (UCA) for a BA (Hons) Computer Games Arts degree, Neil began freelancing. In 2019, Neil Bettison founded 3D Tudor, a YouTube channel, to help other game developers because of his passion for 3D modeling. …”

“…After attending the University for Creative Arts (UCA) for a BA (Hons) Computer Games Arts degree, Neil began freelancing. In 2019, Neil Bettison founded 3D Tudor, a YouTube channel, to help other game developers because of his passion for 3D modeling. …”

“…Auflage Besprochen in: DGE-info, 9 (2017) derStandard.at, 09.04.2018, Beate Hausbichler Neue Zürcher Zeitung, 08.03.2008 Kochen ohne Knochen, 32/2 (2018) Vier Viertel Kult, Winter 2019…”

“…Desde un punto de vista metodológico, esta investigación se basa en el institucionalismo histórico (en adelante, IH) (Pierson, 1996; Goetz y Meyer-Sahling, 2013; Verdun, 2015; Vanhercke y Verdun, 2022) y utiliza el método cualitativo de rastreo de procesos (Bennett y Checkel, 2015; Beach y Pedersen, 2019), con el fin de identificar procesos institucionales y seguir su evolución a lo largo del tiempo. …”

“…Ejerciente como PDI en la Universidad de Almería desde 2019, y como Profesor Tutor en el Centro Asociado de la UNED en Almería desde 2022. …”

“…Miranka Wirth leitet seit 2019 die Arbeitsgruppe "Gehirn und Resilienz" am DZNE in Dresden. …”

“…After attending the University for Creative Arts (UCA) for a BA (Hons) Computer Games Arts degree, Neil began freelancing. In 2019, Neil Bettison founded 3D Tudor, a YouTube channel, to help other game developers because of his passion for 3D modeling. …”

“…È stata visiting fellow all'Istituto universitario europeo (a.a. 2019-2020); Max Planck Fellow al Max Planck Institute for comparative public law and international law (a.a. 2016-2017); Emile Noël Research Fellow alla School of Law della New York University (a.a. 2009-2010). …”

“…Certifications: CompTIA A+, Network +, iNet+, MCSE: Communication, MCSE: Server Infrastructure, CCNP, CWLS, AWLSS, AWLDS, PMP, ITIL℗ʼ Expert v3, ITIL℗ʼ 4 Managing Professional/Strategic Leader, PRINCE2 Practitioner, COBIT 2019 Foundation Wes Bryan: Wes Bryan embarked on his IT career path in 2009, initially as a mentored learning instructor, and later transitioning into a technical IT instructor. …”

“…After attending the University for Creative Arts (UCA) for a BA (Hons) Computer Games Arts degree, Neil began freelancing. In 2019, Neil Bettison founded 3D Tudor, a YouTube channel, to help other game developers because of his passion for 3D modeling. …”

“…Il est dirigé par Antoine Compagnon, avec la collaboration de Céline Surprenant et reçoit le soutien financier de PSL (2016-2019), et de la Fondation Hugot…”

“…After attending the University for Creative Arts (UCA) for a BA (Hons) Computer Games Arts degree, Neil began freelancing. In 2019, Neil Bettison founded 3D Tudor, a YouTube channel, to help other game developers because of his passion for 3D modeling. …”

“…Aquest treball està finançat parcialment pel Departament de Recerca i Universitats de la Generalitat de Catalunya sota l'Ajuda de Doctorat Industrial DI 2019-34…”
Accés lliure

“…Aquest treball està finançat parcialment pel Departament de Recerca i Universitats de la Generalitat de Catalunya sota l'Ajuda de Doctorat Industrial DI 2019-34…”

“…He is an IPv6 Forum Gold Certified Trainer and was inducted into the IPv6 Hall of Fame in 2019. He co-founded Sixscape Communications in Singapore where he built their dual stack networks and was responsible for creating much of their technology. …”

“…Y especial mención, por su interés, requieren los dos capítulos que, sin solaparse, versan sobre la STC 97/2019 (asunto relativo a la lista Falciani). En uno de ellos se critica la involución de la doctrina constitucional acerca del uso de pruebas obtenidas con vulneración de derechos fundamentales, mientras que en el otro se examinan pormenorizadamente los aspectos procesales, al tiempo que se pone de manifiesto la paradoja de la prueba ilícita como una garantía del proceso justo sin regulación procesal. …”

Tabla de Contenidos: “…LOCOS-bound Lateral N-Well to N-Well Bipolar ESD Element 738 16.13 LOCOS-bound Lateral N+ to N-well Bipolar ESD Element 738 16.14 LOCOS-bound Lateral pnp Bipolar ESD Element 739 16.15 LOCOS-bound Thick Oxide MOSFET ESD Element 739 16.16 Shallow Trench Isolation 739 16.17 STI-bound ESD Structures 741 16.18 Substrate Modeling - Electrical and Thermal Discretization 746 16.19 Heavily Doped Substrates 750 16.20 Retrograde Wells and ESD Scaling 766 16.21 Triple Well and Isolated MOSFET CMOS 775 16.22 Summary and Closing Comments 779 References 779 17 ESD in Silicon on Insulator 783 17.1 Silicon on Insulator (SOI) Technologies 783 17.2 Elimination of CMOS Latchup 784 17.3 Lack of Vertical Bipolar Transistors 785 17.4 Floating Gate Tie Downs 785 17.5 Physical Separation of MOSFETs from the Bulk Substrate 785 17.6 SOI ESD Design Fundamental Concepts 786 17.7 SOI Lateral Diode Structure 791 17.8 Transistors - Bulk versus SOI Technology 791 17.9 SOI Buried Resistors (BR) Elements 796 17.10 Dynamic Threshold MOS (DTMOS) SOI MOSFET 797 17.11 SOI P+ Body Contact Abutting n+ Drain 798 17.12 Transmission Line Pulse (TLP) Testing of SOI Diode Designs 798 17.13 SOI ESD with MOSFET Drain and Body Width Ratio Variation 799 17.14 SOI Dual-Gate MOSFET Structure 799 17.15 SOI ESD Design - Mixed Voltage T-Shape Layout Style 800 17.16 SOI ESD Design: Double Diode Network 802 17.17 Bulk to SOI ESD Design Remapping 803 17.18 SOI ESD Diode Design Parameters 804 17.19 SOI ESD Design in Mixed Voltage Interface Environments 808 17.20 Comparison of Bulk with SOI ESD Results 809 17.21 SOI ESD Design with Aluminum Interconnects 810 17.22 SOI ESD Design with Copper Interconnects 812 17.23 SOI ESD Design with Gate Circuitry 813 17.24 Summary and Closing Comments 815 References 815 18 ESD in Analog Circuits 821 18.1 Analog Design Circuits 821 18.2 Single-ended Receivers 822 18.3 Schmitt Trigger Receivers 822 18.4 Differential Receivers 822 18.5 Comparators 824 18.6 Current Sources 825 18.7 Current Mirrors 825 18.8 Widlar Current Mirror 826 18.9 Wilson Current Mirror 826 18.10 Voltage Regulators 827 18.11 Buck Converters 828 18.12 Boost Converters 828 18.13 Buck-Boost Converters 829 18.14 Cuk Converters 830 18.15 Voltage Reference Circuits 830 18.16 Brokaw Bandgap Voltage Reference 830 18.17 Converters 831 18.18 Analog-to-Digital Converter (ADC) 831 18.19 Digital-to-Analog Converters (DAC) 832 18.20 Oscillators 832 18.21 Phase Lock Loop (PLL) Circuits 832 18.22 Delay Locked Loop (DLL) 833 18.23 Analog and ESD Design Synthesis 833 18.24 Analog Chip Architecture - Separation of Analog Power from Digital Power, AVDD-DVDD 836 18.25 ESD Failure in Phase Lock Loop (PLL) and System Clock 837 18.26 ESD Failure in Current Mirrors 837 18.27 ESD Failure in Schmitt Trigger Receivers 838 18.28 ESD Design Practice - Prevent ESD Failure in Schmitt Trigger 840 18.29 Analog-Digital Architecture: Isolated Digital and Analog Domains 841 18.30 ESD Protection Solution - Connectivity of AVDD-to-VDD 842 18.31 ESD Solution: Connectivity of AVSS-to-DVSS 843 18.32 Digital and Analog Domain with ESD Power Clamps 843 18.33 Digital and Analog Domain with Master-Slave ESD Power Clamps 846 18.34 High Voltage, Digital, and Analog Domain Floorplan 846 18.35 Floor-planning of Digital and Analog 846 18.36 Inter-domain Signal Lines ESD Failures 849 18.37 Digital-to-Analog Signal Line ESD Failures 849 18.38 Digital-to-Analog Core Spatial Isolation 851 18.39 Digital-to-Analog Core Ground Coupling 851 18.40 Digital-to-Analog Core Resistive Ground Coupling 852 18.41 Digital-to-Analog Core Diode Ground Coupling 852 18.42 Domain-to-Domain Signal Line ESD Networks 852 18.43 Domain-to-Domain Third-party Coupling Networks 853 18.44 Domain-to-Domain Cross-domain ESD Power Clamp 854 18.45 Digital-to-Analog Domain Moat 855 18.46 Analog and ESD Circuit Integration 855 18.47 Integrated Body Ties 856 18.48 Self-Protecting vs Non-self Protecting Designs 856 References 856 19 ESD in RF CMOS 865 19.1 CMOS and ESD 865 19.2 RF CMOS 865 19.3 RF CMOS and ESD 865 19.4 RF CMOS ESD Failure Mechanisms 865 19.5 RF CMOS - ESD Device Comparisons 866 19.6 RF ESD Metrics 867 19.7 Grounded Gate n-channel MOSFET versus STI Diode 868 19.8 Silicon-controlled Rectifier 869 19.9 SCR versus GGNMOS 869 19.10 Shallow Trench Isolation and Polysilicon Gated Diodes 869 19.11 RF ESD Design 870 19.12 RF ESD Design Layout - Circular RF ESD Devices 870 19.13 Disadvantage of RF ESD Circular Element 871 19.14 RF ESD Design - ESD Wiring Design 872 19.15 RF ESD Design - Loading Capacitance 872 19.16 Metal Capacitance 873 19.17 Analog Metal (AM) 873 19.18 RF ESD Design Practices 874 19.19 RF Passives - ESD and Schottky Barrier Diodes 874 19.20 Schottky Barrier Diodes and Metallurgy 875 19.21 Silicon Germanium Schottky Barrier Diodes 876 19.22 Schottky Barrier RF ESD Design Practice 877 19.23 RF Passives - ESD and Inductors 877 19.24 Quality Factor, Q 878 19.25 Incremental Model of an Inductor 878 19.26 Inductor Coil Parameters 878 19.27 RF Passives - ESD and Capacitors 882 19.28 Capacitors and RF Applications 882 19.29 Capacitors in ESD Networks 882 19.30 Types of Radio Frequency Capacitors 883 19.31 Metal-Oxide-Semiconductor and Metal-Insulator-Metal Capacitors 883 19.32 Varactors and Hyper-abrupt Junction Varactor Capacitors 884 19.33 Metal-ILD-Metal Capacitors 884 19.34 Vertical Parallel Plate (VPP) Capacitors 884 19.35 Tips: ESD RF Design Practices for Capacitors 885 19.36 Summary and Closing Comments 886 Problems 886 References 888 20 ESD in Silicon Germanium 891 20.1 Heterojunctions Bipolar Transistors 891 20.2 Silicon Germanium 891 20.3 Silicon Germanium HBT Devices 892 20.4 Silicon Germanium Device Structure 893 20.5 Silicon Germanium Film Deposition 894 20.6 Silicon Germanium Emitter-Base Region 895 20.7 Silicon Germanium Physics 895 20.8 Silicon Germanium Bandgap 896 20.9 Silicon Germanium Intrinsic Temperature 896 20.10 Position-dependent Silicon Germanium Profile 896 20.11 Position-dependent Intrinsic Temperature 897 20.12 SiGe Collector Current with Graded Germanium Concentration 897 20.13 Silicon Germanium ESD and Time Constants 898 20.14 Silicon Germanium Base Transit Time 898 20.15 Silicon Germanium Breakdown Voltages 898 20.16 Silicon Germanium ESD Measurements 899 20.17 Silicon Germanium Collector-to-Emitter ESD Stress 899 20.18 Transmission Line Pulse Testing of Silicon Germanium HBT 899 20.19 Transmission Line Pulse (TLP) I-V Characteristic 899 20.20 Wunsch-Bell Characteristic of Silicon Germanium HBT 901 20.21 Comparison of Silicon Germanium HBT and Silicon BJT 901 20.22 Wunsch-Bell Characteristic of SiGe HBT versus Si BJT 902 20.23 Intrinsic Base Resistance in SiGe HBT 904 20.24 SiGe HBT Electro-thermal HBM Simulation of Collector-Emitter Stress 904 20.25 Silicon Germanium Transistor Emitter-Base Design 905 20.26 Epitaxial-Base Hetero-Junction Bipolar Transistor (HBT) Emitter-Base Design 907 20.27 Self-aligned Silicon Germanium HBT Device 907 20.28 Non-Self Aligned Silicon Germanium HBT 908 20.29 Emitter-Base Design RF Frequency Performance Metrics 908 20.30 SiGe HBT Emitter-Base Resistance Model 909 20.31 SiGe HBT Emitter-Base Design and Silicide Placement 909 20.32 Silicide Material and ESD 910 20.33 Titanium Silicide and ESD 911 20.34 Cobalt Salicide 913 20.35 Self-aligned (SA) Emitter Base Design 914 20.36 Non-Self Aligned (NSA) Emitter Base Design 917 20.37 Non-Self Aligned HBT Human Body Model (HBM) Step Stress 918 20.38 Transmission Line Pulse (TLP) Step Stress 918 20.39 RF Testing of SiGe HBT Emitter-Base Configuration 921 20.40 Unity Current Gain Cutoff Frequency - Collector Current Plots 923 20.41 f MAX and f T 924 20.42 Electrothermal Simulation of Emitter-Base Stress 925 20.43 Field-Oxide (FOX) Isolation Defined Silicon Germanium Heterojunction Bipolar Transistor HBM Data 926 20.44 Silicon Germanium HBT Multiple-emitter Study 927 20.45 RF ESD Design Practice 927 20.46 Silicon Germanium ESD Failure Mechanisms 928 20.47 Summary and Closing Comments 928 References 928 21 ESD in Silicon Germanium Carbon 935 21.1 Heterojunctions and Silicon Germanium Carbon Technology 935 21.2 Silicon Germanium Carbon 935 21.3 Silicon Germanium Carbon Collector-Emitter ESD Measurements 937 21.4 Silicon Germanium Transistor Emitter-Base Design 940 21.5 Silicon Germanium Carbon - ESD-Induced S-Parameter Degradation 943 21.6 Silicon Germanium Carbon ESD Failure Mechanisms 945 21.7.…”

“…The publication is the outcome of the homonymous research programme fully funded by DAAD German Academic Exchange Service and runned in 2019 in cooperation between the Technische Universität of Berlin, Department of Architecture (Habitat Unit) with the Università della Campania "Luigi Vanvitelli," Dipartimento di Architettura e Disegno Industriale in Aversa (Italy)…”

“…Em momento algum, deixamo-nos vislumbrar pelas máquinas a ponto de negligenciarmos a afetividade, o valor das relações e o exercício constante da escuta ativa e do dialogismo entre professores e alunos, pois "[...] por meio de uma pedagogia crítica e revolucionária podemos resgatar a utopia expressa numa concepção crítico-emancipatória, em que haja a possibilidade de diálogo, interação, transformação e mudança, além de atender aos desafios do tempo que está por vir" (CORRÊA, 2019, p. 12)…”

“…Ejerció como juez en Osuna (Sevilla), Lalín, Puenteareas (Pontevedra) y como magistrado en Bilbao, Gijón y Vigo, y desde 1990 en la Audiencia Provincial de Pontevedra, de cuya sección sexta, con sede en Vigo, pasó a formar parte en 2005 hasta su jubilación en 2019, tras cuarenta años de ejercicio profesional. …”