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- annealing temperature
- AlGaN/GaN 2
- GaN 2
- Technology: general issues 2
- buffer layer 2
- gallium nitride (GaN) 2
- high electron mobility transistor (HEMT) 2
- optical band gap 2
- silicon carbide (SiC) 2
- 1T DRAM 1
- 2DEG 1
- 4H-SiC 1
- ALD technique 1
- Ag 1
- Al-doped ZnO 1
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- CrWN coatings 1
- DIBL effect 1
- Energy industries & utilities 1
- GaN high electron mobility transistor (HEMT) 1
- GaN power HEMTs 1
- GaN-HEMT mesa structures 1
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2Publicado 2022Libro electrónico
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