Gallium nitride (GaN) physics, devices, and technology
Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great...
| Otros Autores: | , |
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| Formato: | Libro electrónico |
| Idioma: | Inglés |
| Publicado: |
Boca Raton :
CRC Press
[2016]
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| Edición: | 1st ed |
| Colección: | Devices, circuits, and systems ;
47. |
| Materias: | |
| Ver en Biblioteca Universitat Ramon Llull: | https://discovery.url.edu/permalink/34CSUC_URL/1im36ta/alma991009755213106719 |
Tabla de Contenidos:
- chapter 1. GaN high-voltage power devices / Joachim Wurfl
- chapter 2. AlGaN/GaN High-electron-mobility transistors grown by ammonia source molecular beam epitaxy / Yvon Cordier
- chapter 3. Gallium nitride transistors on large-diameter Si(111) substrate / Subramaniam Arulkumaran and Geok Ing Ng
- chapter 4. GaN-HEMT scaling technologies for high-frequency radio frequency and mixed signal applications / Keisuke Shinohara
- chapter 5. Group III-nitride microwave monolithically integrated circuits / Rudiger Quay
- chapter 6. GaN-based metal/insulator/semiconductor-type Schottky hydrogen sensors / Ching-Ting Lee, Hsin-Ying Lee, and Li-Ren Lou
- chapter 7. InGaN-based solar cells / Ezgi Dogmus and Farid Medjdoub
- chapter 8. III-nitride semiconductors : new infrared intersubband technologies / Mark Beeler and Eva Monroy
- chapter 9. Gallium nitride-based interband tunnel junctions / Siddharth Rajan, Sriram Krishnamoorthy, and Fatih Akyol
- chapter 10. Trapping and degradation mechanisms in GaN-based HEMTs / Matteo Meneghini, Gaudenzio Meneghesso, and Enrico Zanoni.
