Micro- and Nanotechnology of Wide Bandgap Semiconductors

Owing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at high temperature environments and low sensitivity to ionizing radiation, gallium nitride (GaN) and related group III-nitride heterostructures...

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Detalles Bibliográficos
Otros Autores:	Piotrowska, Anna B. (Editor), Kamińska, Eliana (Otro), Wojtasiak, Wojciech
Formato:	Libro electrónico
Idioma:	Inglés
Publicado:	Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute 2021
Materias:	Technology: general issues GaN HEMT self-heating effect microwave power amplifier thermal impedance thermal time constant thermal equivalent circuit GaN crystal growth ammonothermal method HVPE ion implantation gallium nitride thermodynamics ultra-high-pressure annealing diffusion diffusion coefficients molecular beam epitaxy nitrides laser diode tunnel junction LTE AlN AlGaN/GaN interface state density conductance-frequency MISHEMT gallium nitride nanowires polarity Kelvin probe force microscopy selective area growth selective epitaxy AlGaN/GaN heterostructures edge effects effective diffusion length MOVPE nanowires AlGaN LEDs growth polarity
Ver en Biblioteca Universitat Ramon Llull:	https://discovery.url.edu/permalink/34CSUC_URL/1im36ta/alma991009654389006719