Nonvolatile memory design magnetic, resistive, and phase change

The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Chan...

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Detalles Bibliográficos
Otros Autores: Li, Hai, 1975, author (author), Chen, Yiran, 1976- (-)
Formato: Libro electrónico
Idioma:Inglés
Publicado: Boca Raton, Fla. : Taylor & Francis c2012.
Boca Raton, Fla. : 2012.
Edición:1st ed
Materias:
Ver en Biblioteca Universitat Ramon Llull:https://discovery.url.edu/permalink/34CSUC_URL/1im36ta/alma991009644314106719

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