Nonvolatile memory design magnetic, resistive, and phase change

The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Chan...

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Bibliographic Details
Other Authors: Li, Hai, 1975, author (author), Chen, Yiran, 1976- (-)
Format: eBook
Language:Inglés
Published: Boca Raton, Fla. : Taylor & Francis c2012.
Boca Raton, Fla. : 2012.
Edition:1st ed
Subjects:
See on Biblioteca Universitat Ramon Llull:https://discovery.url.edu/permalink/34CSUC_URL/1im36ta/alma991009644314106719
Description
Summary:The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances,
Item Description:Description based upon print version of record.
Physical Description:1 online resource (200 p.)
Bibliography:Includes bibliographical references.
ISBN:9781315218304
9781351834193
9781280121593
9786613525451
9781439807460