Micro- and nanoelectronics emerging device challenges and solutions
Preface The progress in microelectronics in recent decades is really unimaginable. We have been witnessing unbelievable and so far undisturbed advance in device scaling and growth of integrated circuits in both functionality and complexity. Myths about the limits of miniaturization and scalability o...
| Otros Autores: | , |
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| Formato: | Libro electrónico |
| Idioma: | Inglés |
| Publicado: |
Boca Raton :
Taylor & Francis
[2015]
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| Edición: | 1st ed |
| Colección: | Devices, circuits, and systems.
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| Materias: | |
| Ver en Biblioteca Universitat Ramon Llull: | https://discovery.url.edu/permalink/34CSUC_URL/1im36ta/alma991009633561906719 |
Tabla de Contenidos:
- Front Cover; Contents; Preface; Editor; Contributors; Chapter 1: SiGe BiCMOS Technology and Devices; Chapter 2: Si-Ge Interdiffusion, Dopant Diffusion, and Segregation in SiGe- and SiGe:C-Based Devices; Chapter 3: SiC MOS Devices : Nitrogen Passivation of Near-Interface Defects; Chapter 4: Fully Depleted Devices : FDSOI and FinFET; Chapter 5: Fully Depleted SOI Technology Overview; Chapter 6: FinFETs : Designing for New Logic Technology; Chapter 7: Reliability Issues in Planar and Nonplanar (FinFET) Device Architectures; Chapter 8: High-Mobility Channels
- Chapter 9: 2-D InAs XOI FETs : Fabrication and Device PhysicsChapter 10: Beyond-CMOS Devices; Chapter 11: Stateful STT-MRAM-Based Logic for Beyond-Von Neumann Computing; Chapter 12: Four-State Hybrid Spintronics-Straintronics for Ultra-Low Power Computing; Chapter 13: Nanoionic Switches as Post-CMOS Devices for Neuromorphic Electronics; Chapter 14: Physics-Based Compact Graphene Device Modeling; Chapter 15: Carbon Nanotube Vertical Interconnects : Prospects and Challenges; Chapter 16: Graphene Nanosheet as Ultrathin Barrier; Back Cover
