High performance silicon imaging fundamentals and applications of cmos and ccd sensors
Silicon imaging is a fast growing area of the semiconductor industry. Its use in cell phone cameras is already well established, and emerging applications include web, security, automotive and digital cinema cameras. High performance silicon imaging covers the fundamentals of silicon image sensors,...
Other Authors: | , |
---|---|
Format: | eBook |
Language: | Inglés |
Published: |
Cambridge, England ; Waltham, Massachusetts ; Oxford, England :
Woodhead Publishing
2014.
|
Edition: | 1st edition |
Series: | Woodhead Publishing series in electronic and optical materials ;
Number 60. |
Subjects: | |
See on Biblioteca Universitat Ramon Llull: | https://discovery.url.edu/permalink/34CSUC_URL/1im36ta/alma991009629553106719 |
Table of Contents:
- Cover image; Title page; Table of Contents; Copyright; Contributor contact details; Woodhead Publishing Series in Electronic and Optical Materials; Part I: Fundamentals; 1. Fundamental principles of photosensing; Abstract:; 1.1 Introduction; 1.2 The human vision system; 1.3 Photometry and radiometry; 1.4 History of photosensing; 1.5 Early developments in photodetector technology; 1.6 References; 2. Operational principles of silicon image sensors; Abstract:; 2.1 Introduction; 2.2 Silicon phototransduction
- 2.3 Principles of charged coupled device (CCD) and complementary metal-oxide-semiconductor (CMOS) photosensing technologies2.4 Metal-oxide-semiconductor-capacitor (MOS-C) structure-based photodetectors; 2.5 p-n junction-based photodetectors; 2.6 Noise considerations in pixel structures; 2.7 High-performance pixel structures; 2.8 Miniaturization and other development strategies followed in image sensor technologies; 2.9 Hybrid and 3D detector technologies; 2.10 Conclusion; 2.11 References; 3. Charge coupled device (CCD) image sensors; Abstract:; 3.1 Introduction
- 3.2 Charge coupled device (CCD) design, architecture and operation3.3 Illumination modes; 3.4 Imaging parameters and their characterization; 3.5 Conclusion and future trends; 3.6 References; 4. Backside illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) image sensors; Abstract:; 4.1 Introduction; 4.2 Challenges facing a scaled-down frontside illuminated (FSI) sensor; 4.3 Basics of backside illuminated (BSI) sensor process integration; 4.4 Interface solutions to BSI sensors; 4.5 Conclusion; 4.6 References
- 5. Circuits for high performance complementary metal-oxide-semiconductor (CMOS) image sensorsAbstract:; 5.1 Introduction; 5.2 High resolution image sensors; 5.3 Low noise complementary metal-oxide-semiconductor (CMOS) image sensors; 5.4 High speed image sensors; 5.5 Low power image sensors; 5.6 Wide dynamic range sensors; 5.7 Other high performance designs; 5.8 Conclusion; 5.9 References; 6. Smart cameras on a chip: using complementary metal-oxide-semiconductor (CMOS) image sensors to create smart vision chips; Abstract:; 6.1 Introduction; 6.2 The concept of a smart camera on a chip
- 6.3 The development of vision chip technology6.4 From special-purpose chips to smart computational chips; 6.5 From video rate applications to high-speed image processing chips; 6.6 Future trends; 6.7 Conclusion; 6.8 References; Part II: Applications; 7. Complementary metal-oxide-semiconductor (CMOS) image sensors for mobile devices; Abstract:; 7.1 Introduction; 7.2 Core image/video capture technology requirements and advances in mobile applications; 7.3 Emerging complementary metal-oxide-semiconductor (CMOS) 'sensor-embedded' technologies
- 7.4 Mobile image sensor architecture and product considerations