Silicon photonics fundamentals and devices
The creation of affordable high speed optical communications using standard semiconductor manufacturing technology is a principal aim of silicon photonics research. This would involve replacing copper connections with optical fibres or waveguides, and electrons with photons. With applications such a...
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| Formato: | Libro electrónico |
| Idioma: | Inglés |
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Chichester, West Sussex, UK ; Hoboken, N.J. :
Wiley
2012.
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| Edición: | 1st edition |
| Colección: | Wiley Series in Materials for Electronic & Optoelectronic Applications
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| Ver en Biblioteca Universitat Ramon Llull: | https://discovery.url.edu/permalink/34CSUC_URL/1im36ta/alma991009629331106719 |
Tabla de Contenidos:
- Silicon Photonics: Fundamentals and Devices; Contents; Series Preface; Preface; 1 Introduction to Silicon Photonics; 1.1 Introduction; 1.2 VLSI: Past, Present, and Future Roadmap; 1.3 The Interconnect Problem in VLSI; 1.4 The Long-Haul Optical Communication Link; 1.4.1 Basic Link and Components; 1.4.2 Materials and Integration; 1.5 Data Network; 1.6 Conclusions; 1.7 Scope of the Book; References; 2 Basic Properties of Silicon; 2.1 Introduction; 2.2 Band Structure; 2.2.1 E-k Diagram: General Considerations; 2.2.2 Band Properties near Extremas; 2.2.3 Refined Theory for Band Structures
- 2.2.4 Temperature- and Pressure-Dependent Band Gap 2.2.5 Band Structure in Ge; 2.3 Density-of-States Function; 2.4 Impurities; 2.4.1 Donors and Acceptors; 2.4.2 Isoelectronic Impurities; 2.5 Alloys of Silicon and Other Group IV Elements; 2.5.1 Different Alloy Systems; 2.5.2 Lattice Constants; 2.5.3 Band Structures of Unstrained Alloys; 2.6 Heterojunctions and Band Lineup; 2.7 Si-Based Heterostructures; 2.7.1 Lattice-Mismatched Heteroepitaxy; 2.7.2 Pseudomorphic Growth and Critical Thickness; 2.7.3 Elasticity Theory: Stress and Strain; 2.7.4 Expressions for Critical Thickness
- 2.7.5 Strain Symmetric Structures and Virtual Substrates 2.7.6 Band Offsets and Band Lineup; 2.7.7 Electronic Properties of SiGe/Si Heterostructures; 2.8 Direct Gap: Ge/SiGeSn Heterojunctions; 2.8.1 Structures; 2.8.2 Band Edges and Band Lineup; Problems; References; Suggested Readings; 3 Quantum Structures; 3.1 Introduction; 3.2 Quantum Wells; 3.2.1 Condition for Quantum Confinement; 3.2.2 A Representative Structure; 3.2.3 Simplified Energy Levels; 3.2.4 Density-of-States in Two Dimensions; 3.2.5 Finite Quantum Well; 3.2.6 Refined Methods; 3.2.7 Different Band Alignments
- 3.3 Quantum Wires and Dots 3.3.1 Subbands and DOS in Quantum Wires; 3.3.2 Quantum Dots; 3.4 Superlattices; 3.5 Si-Based Quantum Structures; 3.5.1 Electron Subband Structure; 3.5.2 Hole Subbands; 3.5.3 Quantum Wells and Barriers; 3.6 Effect of Electric Field; Problems; References; Suggested Readings; 4 Optical Processes; 4.1 Introduction; 4.2 Optical Constants; 4.3 Basic Concepts; 4.3.1 Absorption and Emission; 4.3.2 Absorption and Emission Rates; 4.4 Absorption Processes in Semiconductors; 4.5 Fundamental Absorption in Direct Gap; 4.5.1 Conservation Laws
- 4.5.2 Calculation of Absorption Coefficient 4.6 Fundamental Absorption in Indirect Gap; 4.6.1 Theory of Absorption; 4.6.2 Absorption Spectra in Si; 4.6.3 Absorption Spectra in Ge; 4.7 Absorption and Gain; 4.8 Intervalence Band Absorption; 4.9 Free-carrier Absorption; 4.10 Recombination and Luminescence; 4.10.1 Luminescence Lifetime; 4.10.2 Carrier Lifetime: Dependence on Carrier Density; 4.10.3 Absorption and Recombination; 4.10.4 Microscopic Theory of Recombination; 4.11 Nonradiative Recombination; 4.11.1 Recombination via Traps; 4.11.2 Auger Recombination; 4.11.3 Surface Recombination
- 4.11.4 Recombination of Complexes
