GaAs high-speed devices : physics, technology, and circuit applications
The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed...
| Otros Autores: | , |
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| Formato: | Libro electrónico |
| Idioma: | Inglés |
| Publicado: |
[Place of publication not identified]
Wiley
1994
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| Edición: | 1st edition |
| Materias: | |
| Ver en Biblioteca Universitat Ramon Llull: | https://discovery.url.edu/permalink/34CSUC_URL/1im36ta/alma991009629165306719 |
Tabla de Contenidos:
- Development of gallium arsenide devices and integrated circuits
- Gallium arsenide crystal structure and growth
- Epitaxial growth processes
- Process techniques
- Lithography
- Device-related physics and principles
- Metal-to-GaAs contacts
- GaAs metal-semiconductor field-effect transistor
- High electron-mobility transistor (HEMT)
- Heterojunction bipolar transistors
- Resonant-tunneling transistors
- Hot-electron transistors and novel devices
- GaAs FET amplifiers and monolithic microwave integrated circuits
- GaAs digital integrated circuits
- High-speed photonic devices.
