Handbook of cleaning for semiconductor manufacturing fundamentals and applications
This comprehensive volume provides an in-depth discussion of the fundamentals of cleaning and surface conditioning of semiconductor applications such as high-k/metal gate cleaning, copper/low-k cleaning, high dose implant stripping, and silicon and SiGe passivation. The theory and fundamental physic...
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| Formato: | Libro electrónico |
| Idioma: | Inglés |
| Publicado: |
Salem, Mass. ; Scrivener ; Hoboken, N.J. :
John Wiley & Sons, Inc
c2011.
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| Edición: | 1st edition |
| Colección: | Wiley-Scrivener
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| Materias: | |
| Ver en Biblioteca Universitat Ramon Llull: | https://discovery.url.edu/permalink/34CSUC_URL/1im36ta/alma991009629018806719 |
Tabla de Contenidos:
- Handbook of Cleaning for Semiconductor Manufacturing: Fundamentals and Applications; Contents; Foreword; Introduction; Part 1: Fundamentals; 1. Surface and Colloidal Chemical Aspects of Wet Cleaning; 1.1 Introduction to Surface Chemical Aspects of Cleaning; 1.2 Chemistry of Solid-Water Interface; 1.2.1 Surface Charging of Oxide Films in Aqueous Solutions; 1.2.2 Surface Charging of Silicon Nitride Films in Aqueous Solutions; 1.2.3 Electrified Interfaces: The Double Layer and Zeta Potential; 1.2.3.1 Oxide Films and Particles; 1.2.3.2 Nitride Films and Particles
- 1.3 Particulate Contamination: Theory and Measurements1.3.1 Effect of the Electric Double Layer Formation on Particulate Contamination; 1.3.2 Direct Measurement of Interaction Forces between Particles and Surfaces; 1.4 Influence of Surface Electrical Charges on Metal Ion Adsorption; 1.5 Wettability of Surfaces; 1.5.1 Surface Tension and Surface Energy; 1.5.2 Adsorption Characteristics and Wettability Modification; 1.6 High Aspect Ratio Cleaning: Narrow Structures; 1.6.1 Rate of Liquid Penetration into Narrow Structures; 1.6.2 Enhancement of Liquid Penetration into Narrow Structures
- 1.7 Surface Tension Gradient: Application to Drying1.7.1 Isopropyl Alcohol Surface Tension Gradient Drying; 1.7.2 Water Layer After Drying; 1.7.3 Alternate Chemicals for Drying; 1.8 Summary; References; 2. The Chemistry of Wet Cleaning; 2.1 Introduction to Aqueous Cleaning; 2.1.1 Background of Aqueous Cleaning Chemistry; 2.2 Overview of Aqueous Cleaning Processes; 2.2.1 RCA Cleaning; 2.2.2 Modified RCA Processes; 2.2.3 Other Cleaning Processes; 2.3 The SC-1 Clean or APM; 2.3.1 Electrochemistry of SC-1; 2.3.2 Molecular Mechanism; 2.3.3 Etching Rate in APM; 2.3.4 Concentration Variations
- 2.3.5 Concentration Monitoring and Control2.3.6 APM-related Surface Roughening; 2.3.6.1 Vapor Etching; 2.3.6.2 Galvanic Etching and Masking; 2.3.6.3 Catalyzed H2O2 Depletion; 2.3.7 Metal-ion Contamination and Complexing Agents; 2.3.8 Diluted APM; 2.4 The SC-2 clean or HPM; 2.4.1 Particle Deposition; 2.4.2 Hydrogen Peroxide Decomposition in SC-2; 2.4.3 Hydrochloric Acid Fumes; 2.4.4 Diluted HC1; 2.5 Sulfuric Acid-Hydrogen Peroxide Mixture; 2.5.1 Stripping and Cleaning Mechanism; 2.5.1.1 Dissolution Reaction; 2.5.1.2 Discoloration Reaction; 2.5.2 Particulate and Sulfate Contamination
- 2.5.3 Alternatives2.5.3.1 Modification of SPM; 2.5.3.2 Sulfur Trioxide; 2.6 Hydrofluoric Acid; 2.6.1 Hydrogen Passivation; 2.6.2 Etching Rate Control; 2.6.3 Bath Monitoring; 2.6.3.1 Conductivity; 2.6.3.2 Near Infrared; 2.6.4 Contamination; Acknowledgments; References; 3. The Chemistry of Wet Etching; 3.1 Introduction and Overview; 3.1.1 Definition of Etching; 3.1.2 The Physics of Wet Etching; 3.1.2.1 Difference in Bond Strength; 3.1.2.2 Absence of the Proper Reactant; 3.1.2.3 Formation of Inhibiting Coatings; 3.2 Silicon Dioxide Etching; 3.2.1 Hydrofluoric Acid Etching
- 3.2.2 Water-based Etching
