Computational lithography
A Unified Summary of the Models and Optimization Methods Used in Computational Lithography Optical lithography is one of the most challenging areas of current integrated circuit manufacturing technology. The semiconductor industry is relying more on resolution enhancement techniques (RETs), since th...
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Otros Autores: | |
Formato: | Libro electrónico |
Idioma: | Inglés |
Publicado: |
Oxford :
Wiley-Blackwell
2010.
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Edición: | 1st edition |
Colección: | Wiley series in pure and applied optics.
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Materias: | |
Ver en Biblioteca Universitat Ramon Llull: | https://discovery.url.edu/permalink/34CSUC_URL/1im36ta/alma991009628200706719 |
Tabla de Contenidos:
- Computational Lithography
- Contents
- Preface
- Acknowledgments
- Acronyms
- 1 Introduction
- 1.1 OPTICAL LITHOGRAPHY
- 1.1.1 Optical Lithography and Integrated Circuits
- 1.1.2 Brief History of Optical Lithography Systems
- 1.2 RAYLEIGH'S RESOLUTION
- 1.3 RESIST PROCESSES AND CHARACTERISTICS
- 1.4 TECHNIQUES IN COMPUTATIONAL LITHOGRAPHY
- 1.4.1 Optical Proximity Correction
- 1.4.2 Phase-Shifting Masks
- 1.4.3 Off-Axis Illumination
- 1.4.4 Second-Generation RETs
- 1.5 OUTLINE
- 2 Optical Lithography Systems
- 2.1 PARTIALLY COHERENT IMAGING SYSTEMS
- 2.1.1 Abbe's Model
- 2.1.2 Hopkins Diffraction Model
- 2.1.3 Coherent and Incoherent Imaging Systems
- 2.2 APPROXIMATION MODELS
- 2.2.1 Fourier Series Expansion Model
- 2.2.2 Singular Value Decomposition Model
- 2.2.3 Average Coherent Approximation Model
- 2.2.4 Discussion and Comparison
- 2.3 SUMMARY
- 3 Rule-Based Resolution Enhancement Techniques
- 3.1 RET TYPES
- 3.1.1 Rule-Based RETs
- 3.1.2 Model-Based RETs
- 3.1.3 Hybrid RETs
- 3.2 RULE-BASED OPC
- 3.2.1 Catastrophic OPC
- 3.2.2 One-Dimensional OPC
- 3.2.3 Line-Shortening Reduction OPC
- 3.2.4 Two-Dimensional OPC
- 3.3 RULE-BASED PSM
- 3.3.1 Dark-Field Application
- 3.3.2 Light-Field Application
- 3.4 RULE-BASED OAI
- 3.5 SUMMARY
- 4 Fundamentals of Optimization
- 4.1 DEFINITION AND CLASSIFICATION
- 4.1.1 Definitions in the Optimization Problem
- 4.1.2 Classification of Optimization Problems
- 4.2 UNCONSTRAINED OPTIMIZATION
- 4.2.1 Solution of Unconstrained Optimization Problem
- 4.2.2 Unconstrained Optimization Algorithms
- 4.3 SUMMARY
- 5 Computational Lithography with Coherent Illumination
- 5.1 PROBLEM FORMULATION
- 5.2 OPC OPTIMIZATION
- 5.2.1 OPC Design Algorithm
- 5.2.2 Simulations
- 5.3 TWO-PHASE PSM OPTIMIZATION
- 5.3.1 Two-Phase PSM Design Algorithm
- 5.3.2 Simulations.
- 5.4 GENERALIZED PSM OPTIMIZATION
- 5.4.1 Generalized PSM Design Algorithm
- 5.4.2 Simulations
- 5.5 RESIST MODELING EFFECTS
- 5.6 SUMMARY
- 6 Regularization Framework
- 6.1 DISCRETIZATION PENALTY
- 6.1.1 Discretization Penalty for OPC Optimization
- 6.1.2 Discretization Penalty for Two-Phase PSM Optimization
- 6.1.3 Discretization Penalty for Generalized PSM Optimization
- 6.2 COMPLEXITY PENALTY
- 6.2.1 Total Variation Penalty
- 6.2.2 Global Wavelet Penalty
- 6.2.3 Localized Wavelet Penalty
- 6.3 SUMMARY
- 7 Computational Lithography with Partially Coherent Illumination
- 7.1 OPC OPTIMIZATION
- 7.1.1 OPC Design Algorithm Using the Fourier Series Expansion Model
- 7.1.2 Simulations Using the Fourier Series Expansion Model
- 7.1.3 OPC Design Algorithm Using the Average Coherent Approximation Model
- 7.1.4 Simulations Using the Average Coherent Approximation Model
- 7.1.5 Discussion and Comparison
- 7.2 PSM OPTIMIZATION
- 7.2.1 PSM Design Algorithm Using the Singular Value Decomposition Model
- 7.2.2 Discretization Regularization for PSM Design Algorithm
- 7.2.3 Simulations
- 7.3 SUMMARY
- 8 Other RET Optimization Techniques
- 8.1 DOUBLE-PATTERNING METHOD
- 8.2 POST-PROCESSING BASED ON 2D DCT
- 8.3 PHOTORESIST TONE REVERSING METHOD
- 8.4 SUMMARY
- 9 Source and Mask Optimization
- 9.1 LITHOGRAPHY PRELIMINARIES
- 9.2 TOPOLOGICAL CONSTRAINT
- 9.3 SOURCE-MASK OPTIMIZATION ALGORITHM
- 9.4 SIMULATIONS
- 9.5 SUMMARY
- 10 Coherent Thick-Mask Optimization
- 10.1 KIRCHHOFF BOUNDARY CONDITIONS
- 10.2 BOUNDARY LAYER MODEL
- 10.2.1 Boundary Layer Model in Coherent Imaging Systems
- 10.2.2 Boundary Layer Model in Partially Coherent Imaging Systems
- 10.3 LITHOGRAPHY PRELIMINARIES
- 10.4 OPC OPTIMIZATION
- 10.4.1 Topological Constraint
- 10.4.2 OPC Optimization Algorithm Based on BL Model Under Coherent Illumination.
- 10.4.3 Simulations
- 10.5 PSM OPTIMIZATION
- 10.5.1 Topological Constraint
- 10.5.2 PSM Optimization Algorithm Based on BL Model Under Coherent Illumination
- 10.5.3 Simulations
- 10.6 SUMMARY
- 11 Conclusions and New Directions of Computational Lithography
- 11.1 CONCLUSION
- 11.2 NEW DIRECTIONS OF COMPUTATIONAL LITHOGRAPHY
- 11.2.1 OPC Optimization for the Next-Generation Lithography Technologies
- 11.2.2 Initialization Approach for the Inverse Lithography Optimization
- 11.2.3 Double Patterning and Double Exposure Methods in Partially Coherent Imaging System
- 11.2.4 OPC and PSM Optimizations for Inverse Lithography Based on Rigorous Mask Models in Partially Coherent Imaging System
- 11.2.5 Simultaneous Source and Mask Optimization for Inverse Lithography Based on Rigorous Mask Models
- 11.2.6 Investigation of Factors Influencing the Complexity of the OPC and PSM Optimization Algorithms
- Appendix A: Formula Derivation in Chapter 5
- Appendix B: Manhattan Geometry
- Appendix C: Formula Derivation in Chapter 6
- Appendix D: Formula Derivation in Chapter 7
- Appendix E: Formula Derivation in Chapter 8
- Appendix F: Formula Derivation in Chapter 9
- Appendix G: Formula Derivation in Chapter 10
- Appendix H: Software Guide
- References
- Index.