Power electronics handbook devices, circuits, and applications
Power electronics, which is a rapidly growing area in terms of research and applications, uses modern electronics technology to convert electric power from one form to another, such as ac-dc, dc-dc, dc-ac, and ac-ac with a variable output magnitude and frequency. It has many applications in our ever...
| Otros Autores: | |
|---|---|
| Formato: | Libro electrónico |
| Idioma: | Inglés |
| Publicado: |
Amsterdam ; Boston :
Elsevier/BH
c2011.
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| Edición: | 3rd ed |
| Materias: | |
| Ver en Biblioteca Universitat Ramon Llull: | https://discovery.url.edu/permalink/34CSUC_URL/1im36ta/alma991009628102106719 |
Tabla de Contenidos:
- Front Cover; Power Electronics Handbook; Copyright; Dedication; Table of Contents; Preface for Third Edition; Chapter 1. Introduction; 1.1. Power Electronics Defined; 1.2. Key Characteristics; 1.3. Trends in Power Supplies; 1.4. Conversion Examples; 1.5. Tools for Analysis and Design; 1.6. Sample Applications; 1.7. Summary; References; Section I: Power Electronics Devices; Chapter 2. The Power Diode; 2.1. Diode as a Switch; 2.2. Properties of PN Junction; 2.3. Common Diode Types; 2.4. Typical Diode Ratings; 2.5. Snubber Circuits for Diode; 2.6. Series and Parallel Connection of Power Diodes
- 2.7. Typical Applications of Diodes 2.8. Standard Datasheet for Diode Selection; References; Chapter 3. Power Bipolar Transistors; 3.1. Introduction; 3.2. Basic Structure and Operation; 3.3. Static Characteristics; 3.4. Dynamic Switching Characteristics; 3.5. Transistor Base Drive Applications; 3.6. SPICE Simulation of Bipolar Junction Transistors; 3.7. BJT Applications; Further Reading; Chapter 4. The Power MOSFET; 4.1. Introduction; 4.2. Switching in Power Electronic Circuits; 4.3. General Switching Characteristics; 4.4. The Power MOSFET; 4.5. Future Trends in Power Devices; References
- Chapter 5. Insulated Gate Bipolar Transistor 5.1. Introduction; 5.2. Basic Structure and Operation; 5.3. Static Characteristics; 5.4. Dynamic Switching Characteristics; 5.5. IGBT Performance Parameters; 5.6. Gate Drive Requirements; 5.7. Circuit Models; 5.8. Applications; Further Reading; Chapter 6. Thyristors; 6.1. Introduction; 6.2. Basic Structure and Operation; 6.3. Static Characteristics; 6.4. Dynamic Switching Characteristics; 6.5. Thyristor Parameters; 6.6. Types of Thyristors; 6.7. Gate Drive Requirements; 6.8. PSpice Model; 6.9. Applications; Further Reading
- Chapter 7. Gate Turn-off Thyristors 7.1. Introduction; 7.2. Basic Structure and Operation; 7.3. GTO Thyristor Models; 7.4. Static Characteristics; 7.5. Switching Phases; 7.6. SPICE GTO Model; 7.7. Applications; References; Chapter 8. MOS Controlled Thyristors (MCTs); 8.1. Introduction; 8.2. Equivalent Circuit and Switching Characteristics; 8.3. Comparison of MCT and Other Power Devices; 8.4. Gate Drive for MCTs; 8.5. Protection of MCTs; 8.6. Simulation Model of an MCT; 8.7. Generation-1 and Generation-2 MCTs; 8.8. N-channel MCT; 8.9. Base Resistance-controlled Thyristor
- 8.10. MOS Turn-off Thyristor 8.11. Applications of PMCT; 8.12. Conclusions; 8.13. Appendix; References; Chapter 9. Static Induction Devices; 9.1. Introduction; 9.2. Theory of Static Induction Devices; 9.3. Characteristics of Static Induction Transistor; 9.4. Bipolar Mode Operation of SI devices (BSIT); 9.5. CMT Conductivity Modulation Transistor; 9.6. Static Induction Diode; 9.7. Lateral Punch-Through Transistor; 9.8. Static Induction Transistor Logic; 9.9. BJT Saturation Protected by SIT; 9.10. Static Induction MOS Transistor; 9.11. Space Charge Limiting Load (SCLL)
- 9.12. Power MOS Transistors
