Compact models for integrated circuit design conventional transistors and beyond

This modern treatise on compact models for circuit computer-aided design (CAD) presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS...

Descripción completa

Detalles Bibliográficos
Otros Autores: Saha, Samar K., author (author)
Formato: Electrónico
Idioma:Inglés
Publicado: Boca Raton, Florida : CRC Press, Taylor & Francis Group [2016]
Edición:1st edition
Materias:
Ver en Biblioteca Universitat Ramon Llull:https://discovery.url.edu/permalink/34CSUC_URL/1im36ta/alma991009428240306719

Ejemplares similares