Compact models for integrated circuit design conventional transistors and beyond
This modern treatise on compact models for circuit computer-aided design (CAD) presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS...
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Formato: | Electrónico |
Idioma: | Inglés |
Publicado: |
Boca Raton, Florida :
CRC Press, Taylor & Francis Group
[2016]
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Edición: | 1st edition |
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Ver en Biblioteca Universitat Ramon Llull: | https://discovery.url.edu/permalink/34CSUC_URL/1im36ta/alma991009428240306719 |