Strain-engineered MOSFETs
Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate...
| Otros Autores: | , |
|---|---|
| Formato: | Libro electrónico |
| Idioma: | Inglés |
| Publicado: |
Boca Raton :
CRC Press, Taylor & Francis
[2013]
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| Edición: | 1st edition |
| Materias: | |
| Ver en Biblioteca Universitat Ramon Llull: | https://discovery.url.edu/permalink/34CSUC_URL/1im36ta/alma991009421116906719 |
Tabla de Contenidos:
- Front Cover; Contents; Preface; About the Authors; List of Abbreviations; List of Symbols; Chapter 1 - Introduction; Chapter 2 - Substrate-Induced Strain Engineering in CMOS Technology; Chapter 3 - Process-Induced Stress Engineering in CMOS Technology; Chapter 4 - Electronic Properties of Strain-Engineered Semiconductors; Chapter 5 - Strain-Engineered MOSFETs; Chapter 6 - Noise in Strain-Engineered Devices; Chapter 7 - Technology CAD of Strain-Engineered MOSFETs; Chapter 8 - Reliability and Degradation of Strain-Engineered MOSFETs
- Chapter 9 - Process Compact Modelling of Strain-Engineered MOSFETsChapter 10 - Process-Aware Design of Strain-Engineered MOSFETs; Chapter 11 - Conclusions; Back Cover
