CVD Fin etching FinFET GOI GeSn HNO3 concentration HfO2/Si0.7Ge0.3 gate stack III-V on Si Nanoelectronics Nanophotonics Si-MOS Si-cap Technology: general issues anode anti-phase boundaries (APBs) arsenate arsenite atomic layer etching (ALE) band-to-band tunneling charge-trap synaptic transistor dark current detectors digital etch doping effect dual-selective wet etching epitaxial grown epitaxial growth germanium heteroepitaxy in-plane nanowire